以甲基丙烯酸（MAA）、甲基丙烯酸甲酯（MMA）、甲基丙烯酸羟乙酯（HEMA）和甲基丙烯酸苄基酯（BZMA）为原料，通过自由基聚合制备了聚甲基丙烯酸酯系列共聚物PMMHB，再用甲基丙烯酸缩水甘油酯（GMA）与PMMHB反应制得光敏共聚物PMMHB—G。用傅立叶红外光谱（FT—IR）、核磁共振氢谱（^1H-NMR）、凝胶渗透色谱（GPC）、热重分析（TGA）和差示扫描量热（DSC）表征了聚合物的结构与性能，用光学显微镜和扫描电子显微镜（SEM）观测了光致抗蚀剂的耐酸性、微观线路及分辨率。结果表明，随共聚物组成中BZMA含量增加，其分子量（Mn）和玻璃化温度（L）呈下降趋势，热分解温度（Td）提高。光致抗蚀剂的耐酸性随BZMA含量的增加而有所提高。由PMMHB-G制得光致抗蚀剂的图像线路清晰笔直，分辨率可达到40μm。
Copolymers PMMHB were synthesized by reaction of methacrylic acid(MAA), methyl methacrylate (MMA), hydroxyethyl methaerylate(HEMA) and benzyl methacrylate(BZMA) via free radical copolymerization, then a photosensitive copolymer PMMHB-G was prepared by reaction of PMMHB and glycidyl methacrylate (GMA). The structure and properties of eopolymers were characterized by Fourier transform infrared spectroscopy (FT-IR), nuclear magnetic resonance spectroscopy (1H-NMR), gel permeation chromatography ((LPC), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). Moreover, the acid resistance, micro-lines and resolution of photoresist were observed by optical microscope and scanning electron microscopy (SEM). The results show that the molecular weight (Mn), the glass transition temperature (Tg) of copolymer decrease and the thermal decomposition temperature (Td) increases with the content of BZMA increasing, t3esides, the acid resistance of photoresist increases with the content of BZMA increasing. The circuits of prepared PMMI-IB-G photoresist were straight and clear, and its resolution can reach 40μm. Keywords :methacrylate; UV curing ; photosensitive copolymer; photoresist
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