采用直流脉冲磁控溅射方法,在室温下生长氢化Ga掺杂ZnO薄膜(GZO/H),并通过湿法后腐蚀技术获得绒面结构.研究了室温下H2流量对薄膜结构、光电性能及表面形貌的影响.实验表明,氢化GZO(GZO/H)薄膜具有良好的(002)晶面择优取向生长,引入适当流量的H2可以有效提高薄膜的电学特性,GZO/H薄膜具有更低的电阻率以及较高的迁移率和载流子浓度.当通入H2流量为6 sccm时,薄膜电阻率为6.8 ×10-4 Ω·cm,Hall迁移率达34.2 cm2/Ⅴ·s,制备的GZO/H薄膜可见光区域平均透过率优于85％.此外,研究了H2流量对湿法腐蚀后绒面GZO/H薄膜表面形貌的影响,提出了一种薄膜绒面结构形成过程模型.
参考文献
| [1] | Joachim Muller;Bernd Rech;Jiri Springer;Milan Vanecek .TCO and light trapping in silicon thin film solar cells[J].Solar Energy,2004(6):917-930. |
| [2] | O. Kluth;B. Rech;L. Houben;S. Wieder;G. Schope;C. Beneking;H. Wagner;A. Loffl;H. W. Schock .Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(1/2):247-253. |
| [3] | Berginski M;Hupkes J;Schulte M;Schope G;Stiebig H;Rech B;Wuttig M .The effect of front ZnO : Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells[J].Journal of Applied Physics,2007(7):74903-1-74903-11-0. |
| [4] | Bie X;Lu J G;Gong L et al.Transparent Conductive ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering at Low Temperature[J].Applied Surface Science,2009,256:289-293. |
| [5] | Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2010(11):3432. |
| [6] | Van de Walle CG. .Hydrogen as a cause of doping in zinc oxide[J].Physical review letters,2000(5):1012-1015. |
| [7] | McCluskey M D;Jokela S J;Zhuravlev K K et al.Infrared Spectroscopy of Hydrogen in ZnO[J].Applied Physics Letters,2002,81:3807-3809. |
| [8] | Jokela SJ;McCluskey MD .Structure and stability of O-H donors in ZnO from high-pressure and infrared spectroscopy[J].Physical review, B. Condensed matter and materials physics,2005(11):3201-1-3201-4-0. |
| [9] | S. A. Studenikin;Nickolay Golego;Michael Cocivera .Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films[J].Journal of Applied Physics,2000(5):2413-2421. |
| [10] | 赵方红,庄大明,张弓,查杉.功率密度对中频磁控溅射制备的氧化锌镓薄膜性能的影响[J].真空科学与技术学报,2005(03):222-224,237. |
| [11] | 杨伟锋,刘著光,吕英,黄火林,吴正云.RF磁控溅射功率对ZnO：Al薄膜结构和性能的影响[J].光电子·激光,2008(12):1648-1652. |
| [12] | Assuncao V.;Fortunato E.;Marques A.;Aguas H.;Ferreira I.;Costa MEV. Martins R. .Influence of the deposition pressure on the properties of transparent and conductive ZnO : Ga thin-film produced by r.f. sputtering at room temperature[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):401-405. |
| [13] | Fortunato E;Raniero L;Silva L;Goncalves A;Pimentel A;Barquinha P;Aguas H;Pereira L;Goncalves G;Ferreira I .Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2008(12):1605-1610. |
| [14] | 李素敏,赵玉涛,张钊.磁控溅射制备柔性衬底ZnO：Ga透明导电膜微结构及性能研究[J].太阳能学报,2007(11):1233-1238. |
| [15] | S. J. Tark;Y.-W. Ok;M. G. Kang;H. J. Lim;W. M. Kim;D. Kim .Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films[J].Journal of electroceramics,2009(2/4):548-553. |
| [16] | 刘恩科;朱炳升;罗晋声.半导体物理学(第4版)[M].北京:国防工业出版社,2005:256. |
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