Mg掺杂Pb0.3Sr0.7(Ti1-xMgxO)3-x陶瓷薄膜的制备及介电性能研究

稀有金属材料与工程, 2008, 37(z1): 86-89.

Mg掺杂Pb0.3Sr0.7(Ti1-xMgxO)3-x陶瓷薄膜的制备及介电性能研究

陈敬峰 ^1, , 杜丕一 ^2, , 覃莹 ^3, , 翁文剑 ^4, , 韩高荣 ^5,

1.浙江大学硅材料国家重点实验室,浙江,杭州,310027

2.浙江大学硅材料国家重点实验室,浙江,杭州,310027

3.浙江大学硅材料国家重点实验室,浙江,杭州,310027

4.浙江大学硅材料国家重点实验室,浙江,杭州,310027

5.浙江大学硅材料国家重点实验室,浙江,杭州,310027

基金项目: 国家自然科学基金(50332030) 国家重点基础研究发展计划(973计划)(2002CB613302) 国家自然科学基金(50372057)

关键词： PST薄膜 , 射频磁控溅射 , Mg掺杂 , 介电性能

Study on the Dielectric Properties of Pbo0.3Sr0.7(Ti1-xMgx)O3-xThin Films Prepared by RF-Magnetron Sputtering

利用固相烧结法制备的Mg掺杂Pb0.3Sr0.7(Ti1-xMgx)O3-x(PST)陶瓷为靶材,采用射频磁控溅射法在ITO玻璃基板上成功制备了Mg掺杂PST薄膜.用X射线衍射仪、扫描电子显微镜和阻抗分析仪分别测定PST薄膜的物相结构、表面形貌及介电性能.结果显示,薄膜具有良好的钙钛矿结构,无明显的择优取向生成,薄膜表面均匀致密.Mg的掺杂改善了PST薄膜电容值的频率特性,使其更加稳定.薄膜电容值随着掺杂含量的增加而降低,在Mg掺杂量x=0.05左右时达到相对最低值,随后略有升高,介电损耗也有类似现象.薄膜可调性受Mg掺杂量的增加而不断下降,总体下降约3倍,但介电损耗总体下降约达5倍.材料的优值在Mg掺杂量x=0.05时反而有所升高.

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