保持交流电压脉冲幅度不变,对浸在硅酸钠和氢氧化钠溶液中的铝合金样品进行了微弧氧化处理,发现在陶瓷膜形成过程中,样品的电流随时间明显分成五个不同阶段.对应各阶段所制备的陶瓷膜分别用扫描电镜和X射线衍射仪进行了分析,结果表明,铝合金微弧氧化陶瓷膜主要由γ-Al2O3和α-Al2O3相组成,其含量随氧化时间变化.陶瓷膜内外层α,γ相含量差异主要是由于微弧区熔融的Al2O3凝固时冷却速率不同引起的.
Under the condition of keeping impulse amplitude of alternating voltage constant, microarc oxidation of
aluminium alloy in aqueous solution containing sodium silicate and sodium hydroxide was carried by means of alternating current power supply. It is
found that the current passing through the sample is divided obviously into five different stages with the oxidation time. The ceramic coatings prepared in
the different stages were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The result shows that the ceramic
coatings mainly contain γ-Al2O3, α-Al2O3 phases; the γ-Al2O3 and α-Al2O3 contents are close relative to oxidation time. The difference of γ-Al2O3 and α-Al2O3
contents between external layer and internal layer of the coating is mainly caused by the change of cooling rate of molten alumina in microarc zone.
参考文献
| [1] | Van T B, Brown S D, Wirtz G P. Am. Ceram. Soc. Bull., 1977, 56: 563--566. [2] Yerokhin A L, Voevodin A A, Lyubimov V V, et al. Surf. Coat. Technol., 1998, 110: 140--146. [3] Tian J, Luo Z Z, Qi S K, et al. Surf. Coat. Technol., 2002, 154: 1--7. [4] Xue W B, Deng Z W, Lai Y C, et al. J. Am. Ceram. Soc., 1998, 8 (5): 1365--1368. [5] Yang G L, Lü X G, Bai Y Z, et al. Chin. Phys. Lett., 2001, 18: 1141--1143. [6] Gnedenkov S V, Khrisanfova O A, Zavidnaya A G, et al. Surf. Coat. Technol., 2001, 145: 146--151. [7] Han Y, Hong S H, Xu K W. Surf. Coat. Technol., 2002, 154: 314--318. [8] Krishna L R, Somaraju K R, Sundararajan G. Surf. Coat. Technol., 2003, 163--164: 484--490. [9] Dittrich K H, Krysmann W, Kurze P, et al. Cryst. Res. Technol., 1984, 19 (1): 93--99. [10] Ikonopisov S. Electrochem. Acta, 1977, 22: 1077--1082. [11] Gnedenkov S V, Khrisanfova O A, Zavidnaya A G, et al. Surf. Coat. Technol., 2000, 123: 24--28. [12] Krysman W, Kurtz P, Dittrich K H, et al. Cryst. Technol., 1984, 19 (7): 973--976. [13] Nikolaev A V, Markov G A, Peshchevitskii B I. Izv Sib Otd Akad Nauk SSSR, Ser Khim, 1997, (5): 32--37. [14] McPherson R. J. Mater. Sci., 1973, 8: 851--858. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%