欢迎登录材料期刊网

材料期刊网

高级检索

采用真空熔炼(1073 K,8 h)和热压烧结(733 K,1 h)制备了Na掺杂P型Bi0.5 Sb1.5 Te3热电材料,并在293~473 K范围内进行了电导率、塞贝克系数测试.利用X射线衍射(XRD)、扫描电子显微镜(SEM)对样品的物相结构和表面形貌进行了表征.XRD分析表明,真空熔炼合成粉末和热压烧结块体材料的XRD图谱峰与Bi0.5Sb1.5-Te3的标准衍射图谱(01 089-4302)相对应,表明Na元素已经完全固溶到Bi0.5Sb1.5Te3晶体结构中,形成了单相固溶体合金.SEM分析说明,Bi0.Sb1.5xNax Te3热压块体材料在平行和垂直于热压方向的断面上都分布着大量的层片状结构.Na掺杂明显提高了Bi0.5Sb1.5Te3在室温附近的Seebeck系数,但降低了电导率.在实验掺杂浓度范围内,Na掺杂使P型Bi0.5 Sb1.5 Te3块体材料的功率因子均减小.

参考文献

[1] Joraide AA. .THERMOELECTRIC PROPERTIES OF FINE-GRAINED SINTERED (BI2TE3)(25)-(SB2TE3)(75) P-TYPE SOLID SOLUTION[J].Journal of Materials Science,1995(3):744-748.
[2] A. Giani;A. Boulouz .Electrical and thermoelectrical properties of Sb2Te3 prepared by the metal-organic chemical vapor deposition technique[J].Journal of Materials Science Letters,1999(7):541-543.
[3] Rothe K;Stordeur M;Leipner H S .Power factor anisotropy of p-type and n-rype conductive thermoelectric Bi-Sb-Te thin films[J].Journal of Electronic Materials,2012,39(09):1395.
[4] JAE-HONG LIM;MI YEONG PARK;DONG CHAN LIM;BONGYOUNG YOO;JUNG-HO LEE;NOSANG V. MYUNG;KYU HWAN LEE .Electrodeposition of p-Type Sb_(x)Te_(y) Thermoelectric Films[J].Journal of Electronic Materials,2011(5):1321-1325.
[5] Yang J Y;Aizawa;Yamamoto A et al.Thermoelectric properties of n-type (Bi2Se3)x (Bi2Te3)1-x prepared by mechanical alloying and hot pressing[J].Journal of Alloys and Compounds,2000,312(1-2):602.
[6] Yim W M;Rosi F D .Compound tellurides and their alloys for peltier colling-A review[J].Solid-State Electronics,1972,15(10):1121.
[7] Badding JV. .High-pressure synthesis, characterization, and tuning of solid state materials [Review][J].Annual review of materials research,1998(0):631-658.
[8] D. A. Broido;T. L. Reinecke .Thermoelectric transport in quantum well superlattices[J].Applied physics letters,1997(21/24):2834-2836.
[9] Harman T C;Taylor P J;Walsh M P et al.Quantum dot superlattice thermoelectric materials and devices[J].Science,2002,297(5590):2229.
[10] Youn S L;Freeman T L .First principles electronic structure and its relation to thermoelectric properties of Bi2Te3[J].Physical Review B:Condensed Matter,2001,63(08):085112.
[11] Chaput L;Pecheur P;Tobola J;Scherrer H .Transport in doped skutterudites: Ab initio electronic structure calculations[J].Physical review, B. Condensed matter and materials physics,2005(8):5126-1-5126-11-0.
[12] Di Salvo F J .Thermoelectric cooling and power generation[J].Science,1999,285(5428):703.
[13] Chen C;Zhang B P;Liu D W .Thermoelectric properties of CuyBix Sb2 x y Te3 alloys fabricated by mechanical alloying and spark plasma sintering[J].Intermetallics,2012,25:131.
[14] Cui J L;Xue H F;Xiu W J .Crystal structure analysis and thermoelectric properties of p-type pseudo-binary (Al2Te3)x-(Bi0.5 Sb1.5 Te3) 1-x alloys prepared by spark plasma sintering[J].Journal of Alloys and Compounds,2008,460(1-2):426.
[15] O. Ceyda Yelgel;G. P. Srivastava .Thermoelectric properties of n-type Bi_2(Te_(0.85)Se_(0.15))_3 single crystals doped with CuBr and SbI_3[J].Physical review, B. Condensed matter and materials physics,2012(12):125207:1-125207:11.
[16] Duan XK;Yang JY;Xiao CJ;Zhu W .Structural and thermoelectric properties of Ag-doped Bi-2(Te0.95Se0.05)(3) thin films prepared by flash evaporation[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(19):5971-5974.
[17] Chung D Y;Iordanidis L;Choi K S .Complex chalcogenides as thermoelectric materials:A solid state chemistry approach[J].Bulletin of the Korean Chemical Society,1998,19(12):1283.
[18] B.L.Du;H.Li;X.F.Tang .Enhanced thermoelectric performance in Na-doped p-type nonstoichiometric AgSbTe_2 compound[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2011(5):2039-2043.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%