用X射线衍射技术研究了在Si_3N_4陶瓷与表面镀钛膜之间的固态化学反应过程,当反应温度不超过973K时,Ti与Si_3N_4之间不反应;温度在1073—1123K时,反应产物为Ti_2N和Ti_5Si_3,温度达到1173K时,反应产物为TiN和Ti_5Si_4,温度达到1273K时,反应产物为TiN和Ti_5Si_4。在整个反应过程中,Si_3N_4陶瓷基体相的晶格常数未发生变化,说明Ti原子不能溶入Si_3N_4陶瓷的晶格之中。
The chemical reaction as solid state between pressless sintered Si_3N_4 substrate andTi-deposited film has been studied by X-ray diffraction analysis. The reaction all depends up-on temperature. It seems no reaction below 973 K; Ti_2N and Ti_5Si_3 are the reaction productsfrom 1073 to 1123K, and finally, till 1173K, the Ti-deposited film over Si_3N_4 substrate willexhaust itself and the reaction products change into TiN and Ti_5Si_4. The lattice constant of Si_3N_4is unaltered thronghout postannealing. This implies that the Ti atoms will never dissolve intoSi_3N_4 lattice.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%