采用射频磁控溅射方法,在Ar-N2混合气中Si衬底上生长Zn3N2薄膜.研究了氮分压和衬底温度对样品的光透明性、微结构、表面形貌以及光学性质的影响,同时研究了样品在空气氛围下保持20天后的性能,并与新镀薄膜进行比较.结果表明,Zn3N2薄膜直接光学带隙可由氮分压调节的范围为1.18～1.50 eV,氮分压比例增大,薄膜的光透明性减弱,并且对暴露在空气中20天以后的薄膜进行测试发现,薄膜的光透明性明显增强,随着衬底温度的升高,生长的薄膜择优取向增多,晶粒尺寸逐渐变大.
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