铌是用于制造电解电容器的优质材料,但在进行电解反应生长无定形Nb2O5电介质膜层的过程中会同时生成2种低价态的铌的氧化物(NbO,NbO2),影响了铌电容器的性能.本研究通过对影响无定形铌氧化膜生长的各种条件进行对比实验,并就生长机理进行了深入分析,较好地控制了氧化膜中3种氧化物的相对含量,改善了铌电容器的性能.
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