介绍了光泵浦垂直外腔面发射激光器的结构、增益芯片工作原理及性能优势,综合评述该领域的最新研究进展,包括高功率、腔内倍频、可调谐运转、被动锁模等技术的最新进展,并探讨该类型激光器的发展前景和技术发展方向.
参考文献
| [1] | 陈柏众,戴特力.光泵浦半导体垂直外腔面发射激光器的原理与应用[J].重庆师范大学学报（自然科学版）,2008(03):62-65,96. |
| [2] | Kuznetsov M.;Hakimi F. .High-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams[J].IEEE Photonics Technology Letters,1997(8):1063-1065. |
| [3] | 宗楠,李成明,陈亚辉,崔大复,许祖彦.光泵垂直扩展腔面发射半导体激光器的研究进展[J].红外与激光工程,2007(06):785-789. |
| [4] | Song Yanrong;Zhang Peng;Tian Jinrong.1043 nm semiconductor disk laser[A].San Francisco CA,2010 |
| [5] | 倪演海,戴特力,梁一平,杜亮,伍喻.垂直外腔面发射激光器的模拟分析[J].重庆师范大学学报(自然科学版),2011(01):55-59. |
| [6] | 倪演海 .新型垂直外腔面发射激光器研究[D].重庆:重庆师范大学,2011. |
| [7] | Benno R(o)sener;Marcel Rattunde;Rüdiger Moser.GaSb based optically pumped semiconductor disk lasers emitting in the 2.0 to 2.8μm wavelength range[A].San Francisco CA,2010 |
| [8] | Rahim M;Khiar A;Felder F et al.4.5μm wavelength vertical external cavity surface emitting laser operating above room temperature[J].Applied Physics Letters,2009,94:201112. |
| [9] | Vurgaftman I.;Ram-Mohan LR.;Meyer JR. .Band parameters for III-V compound semiconductors and their alloys [Review][J].Journal of Applied Physics,2001(11 Pt.1):5815-5875. |
| [10] | Peng Zhang,Yanrong Song,Xinping Zhang,Jinrong Tian,Zhigang Zhang,张鹏,宋晏蓉,田金荣,张志刚.High power vertical-external-cavity surface-emitting laser[J].中国光学快报（英文版）,2010(04):401-403. |
| [11] | Harkonen A;Suomalainen S;Saarinen E et al.4 W single transverse mode VECSEL utilizing intra cavity diamond head spreader[J].Electronics Letters,2006,42(12):693. |
| [12] | Alford WJ.;Raymond TD.;Allerman AA. .High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser[J].Journal of the Optical Society of America, B. Optical Physics,2002(4):663-666. |
| [13] | Benno Rosener;Marcel Rattunde;Rudiger Moser;Christian Manz;Klaus Kohler;Joachim Wagner .GaSb-Based Optically Pumped Semiconductor Disk Laser Using Multiple Gain Elements[J].IEEE Photonics Technology Letters,2009(13):848-850. |
| [14] | B. Rudin;A. Rutz;M. Hoffmann;D. J. H. C. Maas;A.-R. Bellancourt;E. Gini;T. Sudmeyer;U. Keller .Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode[J].Optics Letters,2008(22):2719-2721. |
| [15] | Jun Ho Lee;Jun Youn Kim;Sang Moon Lee;Jae Ryung Yoo;Ki Sung Kim;Soo Haeng Cho;Seong Jin Lim;Gi Bum Kim;Sung Min Hwang;Taek Kim;Yong Jo Park .9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser[J].IEEE Photonics Technology Letters,2006(20):2117-2119. |
| [16] | Juan Chilla;Shu Qi Ze;Zhou Hailong.Recent advances in optically pumped semiconductor lasers[A].San Jose,California,U.S.A,2007 |
| [17] | Kang Li;Aiyun Yao;N. J. Copner;C. B. E. Gawith;Ian G. Knight;Hans-Ulrich Pfeiffer;Bob Musk .Compact 1.3 W green laser by intracavity frequency doubling of a multi-edge-emitter laser bar using a MgO:PPLN crystal[J].Optics Letters,2009(22):3472-3474. |
| [18] | Li Kang;Yao Aiyun;Copner N J et al.Blue light generated by intra-cavity frequency doubling of an edge-emitting diode laser with a periodically poled LiNbO3 crystal[J].Optics Express,2009,17(24):22073. |
| [19] | Efficient frequency doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal[J].Optics Letters,2003(21):2091-2093. |
| [20] | Yanrong Song,Peng Zhang,Xinping Zhang,Boxia Yan,Yi Zhou,Yong Bi,Zhigang Zhang.Intracavity frequency-doubled green vertical external cavity surface emitting laser[J].中国光学快报（英文版）,2008(04):271-273. |
| [21] | 李自丽 .薄片式半导体倍频激光器特性研究[D].北京工业大学,2011. |
| [22] | Lutgen S;Kuehnelta M;Steegmuellera U.Green semiconductor disk laser with 0.7 W CW output power[A].San Jose,California,U.S.A,2005 |
| [23] | Borgentun C;Bengtsson J;Larsson A.Optically pumped high-power semiconductor disk laser with gain element engineered for wide tunability[A].Brussels,2010 |
| [24] | Rautiainen J;H(a)rk(o)nen A;Korpij(a)rvi V M et al.2.7 W tunable orange-red GaInNAs semiconductor disk laser[J].Optics Express,2007,15(26):18345. |
| [25] | Maclean A. J.;Kemp A. J.;Calvez S.;Kim J.-Y.;Kim T.;Dawson M. D.;Burns D. .Continuous Tuning and Efficient Intracavity Second-Harmonic Generation in a Semiconductor Disk Laser With an Intracavity Diamond Heatspreader[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,2008(3):216-225. |
| [26] | Laurain A;Myara M;Beaudoin G et al.High power single frequency continuously tunable compact extended cavity semicondutor laser[J].Optics Express,2009,17(12):9503. |
| [27] | Optimization of Ultrashort Pulse Generation in Passively Mode-Locked Vertical External-Cavity Semiconductor Lasers[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,2009(5):439. |
| [28] | Bellancourt A R;Maas D J H C;Rudin B et al.Modelocked integrated extemal cavity surface emitting laser[J].IET Optoelectron,2009,3(02):61. |
| [29] | Dirk Lorenser;Deran J. H. C. Maas;Heiko J. Unold;Aude-Reine Bellancourt;Benjamin Rudin;Emilio Gini;Dirk Ebling;Ursula Keller .50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,2006(8):838-847. |
| [30] | Song, YR;Zhang, P;Zhang, XP;Zhang, ZG .Theoretical analyses and experimental studies on semiconductor disk lasers[J].Optical and Quantum Electronics,2009(1):39-45. |
| [31] | 陈柏众,戴特力,梁一平,秦莉,赵红,周勇,程立文.用有限元法讨论光抽运垂直外腔面发射半导体激光器的散热性能[J].中国激光,2009(10):2745-2750. |
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