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本文建立了一个二维全局模型对120 KG单晶硅炉的热系统进行了数值模拟.通过对温场的单独模拟以及温场流场的耦合模拟得到了不同模型下晶体生长所需要的功率,并将两组模拟值与实验数据进行对比得到了加入流体流动后系统所产生的功率损耗.同时对晶体生长过程的分阶段模拟得到了晶体生长过程热系统温度分布的变化规律以及熔体流动的变化规律.结果显示,在整个晶体生长过程中流体流动所产生的功率损耗占实际功率的21.6%左右.

参考文献

[1] 邵淑芳,张庆礼,苏静,孙敦陆,王召兵,张霞,殷绍唐.提拉法晶体生长数值模拟研究进展[J].人工晶体学报,2005(04):687-692.
[2] Lipchin A.;Brown RA. .Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon[J].Journal of Crystal Growth,1999(1/2):71-91.
[3] 高宇,周旗钢,戴小林,肖清华.热屏和后继加热器对生长φ300mm硅单晶热场影响的数值分析[J].人工晶体学报,2007(04):832-836,831.
[4] Simulation of the thermal fluctuation according to the melt height in a CZ growth system[J].Journal of Crystal Growth,2010(8):p.1453.
[5] Do Won Song;Sang Hun Lee;Young Hee Mun;Hyo Kim .Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-typed heat shield[J].Journal of Crystal Growth,2011(1):27-31.
[6] 滕冉,戴小林,徐文婷,肖清华,周旗钢.热屏优化对大直径单晶硅生长影响的数值模拟[J].人工晶体学报,2012(01):238-242,252.
[7] 滕冉,戴小林,肖清华,周旗钢,常青.大直径硅单晶生长过程中固/液界面形状及熔体流动的数值分析[J].人工晶体学报,2013(04):611-615.
[8] Maksims Kirpo .Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT[J].Journal of Crystal Growth,2013(May 15):60-69.
[9] Jyh-Chen Chen;Chung-Wei Lu .Influence of the crucible geometry on the shape of the melt-crystal interface during growth of sapphire crystal using a heat exchanger method[J].Journal of Crystal Growth,2004(1/3):239-245.
[10] Jin Chaohua.Numerical study of heat transport and fluid flow during the silicon crystal growth process by the Czochralski method[J].半导体学报(英文版),2013(06):38-43.
[11] V.V. Kalaev;I.Yu. Evstratov;Yu.N. Makarov .Gas flow effect on global heat transport and melt convection in Czochralski silicon growth[J].Journal of Crystal Growth,2003(1/2):87-99.
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