黄铜矿型CulnSe2(ClS)多晶薄膜具有优良的光伏特性.在对现有制备工艺进行对比分析的基础上,首次采用SOL-gel法制备了Cu2ln2O5(ClO)薄膜,经Se化获得了结构均匀、表面平整、组成接近于化学计量比的ClS薄膜,其电阻率介于105～106Ω.om之间,与国外采用其它高成本工艺制备的薄膜性能相当.基于上述实验,对Se化ClO法制备ClS半导体薄膜的机理及材料的光伏性能进行了分析.
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