采用化学浴法,以ZnSO4·7H2O和SC( NH2)2作为反应前驱物,C6H5O7 Na3·2H2O作为络合剂,NH3·H2O 作为辅助络合剂和缓冲剂制备Zn(O,S)薄膜.采用SEM、EDS、XPS、XRD和透射光谱分析方法,研究氨水浓度对化学浴法制备的Zn(O,S)薄膜形貌、成分、结构和光学性能的影响以及Zn(O,S)薄膜的形成机理.结果表明:Zn(O,S)薄膜是由ZnO和ZnS纳米颗粒混合组成的,ZnO具有纤锌矿结构,ZnS是以非晶相存在.随着反应溶液中氨水浓度的降低,薄膜中所包含的ZnO逐渐减少,ZnS逐渐增加,S/Zn原子比逐渐增加,透射率和光学带隙也逐渐增大.
参考文献
[1] | Jackson P;Hariskos D;Lotter E et al.New World Record Efficiency for Cu (In,Ga) Se2 Thin-Film Solar Cells beyond 20%[J].Progress in Photovoltaics:Research and Applications,2011,19(07):894-897. |
[2] | HUANG Jian-feng,朱辉,CAO Li-yun,吴建鹏,HE Hai-yan.pH值对电沉积法制备ZnS光学薄膜影响的研究[J].人工晶体学报,2008(04):862-865. |
[3] | 夏冬林,石正忠,张兴良,王慧芳,刘俊.热处理对电沉积制备ZnS薄膜物相组成及光学性能的影响[J].人工晶体学报,2010(02):392-395. |
[4] | Dona J M;Herrero J .Process and Tilm Characterization of Chemical-Bath-Deposited ZnS Thin Films[J].Journal of the Electrochemical Society,1994,141:205. |
[5] | W. Vallejo;M. Hurtado;G. Gordillo .Kinetic study on Zn(O,OH)S thin films deposited by chemical bath deposition[J].Electrochimica Acta,2010(20):5610-5616. |
[6] | Koichi Yamaguchi;Tsukasa Yoshida;Daniel Lincot;Hideki Minoura .Mechanistic Study of Chemical Deposition of ZnS Thin Films from Aqueous Solutions Containing Zinc Acetate and Thioacetamide by Comparison with Homogeneous Precipitation[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,2003(1):387-397. |
[7] | V. Dimitrova;J. Tate .Synthesis and characterization of some ZnS-based thin film phosphors for electroluminescent device applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1):134-138. |
[8] | Xian H;Benalloul P;Barthou C et al.Quantitative Analyses and Crystallographic Studies of ZnS:Mn Thin Films Prepared by RF Magnetron Reactive Sputtering[J].Thin Solid Films,1994,248(02):193-198. |
[9] | Froment M.;Essaaidi H.;Maurin G.;Cortes R.;Cachet H. .METAL CHALCOGENIDE SEMICONDUCTORS GROWTH FROM AQUEOUS SOLUTIONS[J].Pure and Applied Chemistry,1997(1):77-82. |
[10] | Baishya, U;Sarkar, D .ZnS nanocomposite formation: Effect of ZnS source concentration ratio[J].Indian Journal of Pure & Applied Physics,2011(3):186-189. |
[11] | Kang, S.R.;Shin, S.W.;Choi, D.S.;Moholkar, A.V.;Moon, J.-H.;Kim, J.H. .Effect of pH on the characteristics of nanocrystalline ZnS thin films prepared by CBD method in acidic medium[J].Current applied physics: the official journal of the Korean Physical Society,2010(Suppl.3):S473-S477. |
[12] | O'Brien P.;McAleese J. .Developing an understanding of the processes controlling the chemical bath deposition of ZnS and CdS[J].Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology,1998(11):2309-2314. |
[13] | Bhattacharya R N;Contreras M A;Teeter G .18.5 % Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer,Chemical-BathDdeposited ZnS(O,OH)[J].Japanese Journal of Applied Physics,2004,43:1475. |
[14] | 徐鹏,刘庭芝,郭岚.温度对化学水浴法制备ZnS薄膜的影响[J].材料导报,2010(04):94-97. |
[15] | 汤会香,严密,张辉,崔天峰,倪利红,杨德仁.不同络合剂对化学水浴法制备ZnS薄膜性能的影响[J].太阳能学报,2006(04):373-376. |
[16] | 刘恩科;朱秉升;罗晋生.半导体物理学[M].北京:电子工业出版社,2011:283. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%