按化学计量比并富P2％配料,通过改进的单温区合成法合成出高纯、单相的ZnGeP2多晶原料,在无磁场、6T匀强磁场和上、下梯度磁场条件下,使用坩埚下降法成功生长出ZnGeP2单晶.研究表明,施加6T匀强磁场和上、下梯度磁场后,ZnGeP2晶体依次沿(116)、(112)和(220)取向,与无磁场下晶体取向不同;ZnGeP2晶体成分沿纵向方向在强磁场中比无磁场中波动明显;红外透过率在匀强和上梯度磁场中均有明显提高,下梯度磁场中变化不明显;电阻率在匀强和上梯度磁场中有所下降,而下梯度磁场中则有所升高.
参考文献
| [1] | Shay J L;Wernick J H.Ternary Chalcopyrite Semiconductors:Growth,Electronic Properties and Applications[M].Pergamon Press,New York,1975:3-12. |
| [2] | Wang TY;Sivakumar R;Rai DK;Hsu WT;Lan CW .A new single step process for synthesis and growth of ZnGeP2 crystal[J].Journal of the Chinese Institute of Chemical Engineers,2008(4):385-387. |
| [3] | Hofmann DM.;Romanov NG.;Gehlhoff W.;Pfisterer D.;Meyer BK.;Azamat D. Hoffmann A. .Optically detected magnetic resonance experiments on native defects in ZnGeP2[J].Physica, B. Condensed Matter,2003(0):978-981. |
| [4] | Verozubova GA.;Gribenyukov AI.;Korotkova VV.;Vere AW.;Flynn CJ. .ZnGeP2 growth: melt non-stoichiometry and defect substructure[J].Journal of Crystal Growth,2002(Pt.3):2000-2004. |
| [5] | 孙永强,赵北君,朱世富,赵欣,杨慧光,程江,张羽,陈宝军,何知宇.ZnGeP2单晶生长温场研究[J].人工晶体学报,2009(03):552-555. |
| [6] | 吴海信,倪友保,耿磊,毛明生,王振友,程干超,杨琳.红外非线性晶体ZnGeP2的生长及品质研究[J].人工晶体学报,2007(03):507-511. |
| [7] | 夏士兴,杨春晖,朱崇强,马天慧,王猛,雷作涛,徐斌.ZnGeP2晶体近红外吸收特性的研究[J].无机材料学报,2010(10):1029-1033. |
| [8] | 林彦霆,顾庆天,刘宏,张怀金,葛文伟,房昌水,胡小波,王继扬.ZnGeP2多晶料合成与晶体生长[J].功能材料,2006(06):864-866. |
| [9] | Chedzey H A;Hurle D T J .Avoidance of growth-striae in semiconductor and metal crystals grown by zone-melting techniques[J].Journal of Materials Science,1970,5:822. |
| [10] | Sen S;Lefever R A;Wilcox W R .Influence of magnetic field on vertical Bridgman-Stockbarger growth of In2GaSb[J].Journal of Crystal Growth,1978,43:526. |
| [11] | Utech H P;Flemings M .Elimination of solute banding in indium antimonide crystals by growth in a magnetic field[J].Journal of Applied Physics,1966,37(5):2021-2023. |
| [12] | Dietz N;Tsveybak 1;Ruderman W et al.Native defect related optical properties of ZnGeP2[J].Applied Physics Letters,1994,65(22):2759-2761. |
| [13] | Mikelson A E;Karklin Y K .Control of crystallization processes by means of magnetic field[J].J Crvstal Growth,1981,52:524-529. |
| [14] | 宋大有;褚祥康;周禧 等.纵向磁场拉制硅单晶的工艺研究[J].上海金属,1988,9(3):12-21. |
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