蓝宝石衬底上6H-SiC单晶薄膜的化学气相淀积生长

功能材料, 2004, 35(2): 192-194.

蓝宝石衬底上6H-SiC单晶薄膜的化学气相淀积生长

孙澜 ^1, , 陈平 ^2, , 韩平 ^3, , 郑有炓 ^4, , 史君 ^5, , 朱嘉 ^6, , 朱顺明 ^7, , 顾书林 ^8, , 张荣 ^9,

1.南京大学,物理系,江苏,南京,210093

2.南京大学,物理系,江苏,南京,210093

3.南京大学,物理系,江苏,南京,210093

4.南京大学,物理系,江苏,南京,210093

5.南京大学,物理系,江苏,南京,210093

6.南京大学,物理系,江苏,南京,210093

7.南京大学,物理系,江苏,南京,210093

8.南京大学,物理系,江苏,南京,210093

9.南京大学,物理系,江苏,南京,210093

基金项目: 国家自然科学基金(60136020) 国家重点基础研究发展计划(973计划)(G20000683)

关键词：化学气相淀积 , 6H-SiC , 蓝宝石 , 低温生长

Single-crystalline 6H-SiC heteroepitaxial growth by chemical vapor deposition on sapphire substrates at reduced temperatures

采用低压化学气相淀积方法以相对较低的生长温度(900～1050℃)在蓝宝石(0001)衬底上外延生长了6H-SiC单晶薄膜.其晶体质量和结构由X射线衍射谱和喇曼散射谱的测量结果得到确定.俄歇电子能谱和X射线光电子能谱的观察表明所制备的6H-SiC薄膜中的Si-C键的结合能为181.4eV,Si与C的原子比符合SiC的化学配比.扫描电子显微镜的分析显示6H-SiC外延层和蓝宝石衬底间的界面相当平整.由紫外及可见光波段吸收谱的结果得到所生长的6H-SiC的禁带宽度为2.83eV、折射系数在2.5～2.7之间,均与6H-SiC体材料的相应数据一致.

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