采用射频磁控溅射法,室温下在玻璃衬底上制备出了具有良好附着性、低电阻率和高透过率的新型透明导电薄膜YZO(ZnO掺杂Y2O3简称YZO).在薄膜厚度为600nm的情况下,研究了薄膜电学特性随溅射功率和溅射气压的变化情况.X射线衍射谱表明YZO薄膜是多晶膜,具有ZnO的六角纤锌矿结构,最佳取向为(002)方向.最佳溅射条件下制备的薄膜电阻率为8.71×10-4Ω·cm,在可见光范围内平均透过率达到92.3%,禁带宽度为3.57eV.
参考文献
| [1] | Kim S I;Cho S H;Choi S R et al.[J].Thin Solid Films,2009,517:4061-4064. |
| [2] | Gadisa A;Svensson M;Andersson M R et al.[J].Applied Physics Letters,2004,84:1609-1611. |
| [3] | Adachi C;Nagai K;Tamoto N .[J].Applied Physics Letters,1995,66:2679-2681. |
| [4] | Hu J;Gordon R G .[J].Journal of Applied Physics,1992,71:880-890. |
| [5] | Sivaramakrishnan K;Alford T L .[J].Applied Physics Letters,2009,94:052104(1-0521043). |
| [6] | Look D C .[J].Semiconductor Science and Technology,2005,20:S55-S61. |
| [7] | Yang T L;Zhang D H;Ma J et al.[J].Thin Solid Films,1998,326:60-62. |
| [8] | Lee J H;Lee S Y;Park B O .[J].Mate Sci and Eng B,2006,127:267-271. |
| [9] | Asmar R Al;Uillaguet S;Ramonda J M et al.[J].Journal of Crystal Growth,2005,275:512-520. |
| [10] | Lv M S;Xiu X W;Pang Z Y et al.[J].Applied Surface Science,2006,252:5687-5692. |
| [11] | Xiu XW;Pang ZY;Lv MS;Dai Y;Ye LN;Han SH .Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(6):3345-3348. |
| [12] | Addonizio ML;Diletto C .Doping influence on intrinsic stress and carrier mobility of LP-MOCVD-deposited ZnO : B thin films[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2008(11):1488-1494. |
| [13] | Sharma R;Sehrawat K;Wakahara A et al.[J].Applied Surface Science,2009,255:5781-5788. |
| [14] | Yang T L;Zhang D L;Ma J et al.[J].Thin Solid Films,1998,326:60-62. |
| [15] | Kim H.;Horwitz JS.;Qadri SB.;Chrisey DB. .Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):107-111. |
| [16] | Schuler T;Aegerter M A .[J].Thin Solid Films,1999,351:125-131. |
| [17] | Yu XH;Ma J;Ji F;Wang YH;Zhang XJ;Cheng CF;Ma HL .Preparation and properties of ZnO : Ga films prepared by r.f. magnetron sputtering at low temperature[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2005(2):222-226. |
| [18] | 刘著光,杨伟锋,吕英,黄火林,吴正云.氩气压强对射频磁控溅射ZnO：Al薄膜结构和性能的影响[J].光谱实验室,2008(03):425-427. |
| [19] | Song DY.;Aberle AG.;Xia J. .Optimisation of ZnO : Al films by change of sputter gas pressure for solar cell application[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):291-296. |
| [20] | Meng LJ.;Dossantos MP. .PROPERTIES OF INDIUM TIN OXIDE (ITO) FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING AT DIFFERENT PRESSURES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):151-155. |
| [21] | Zhou X;Wang S Q;Lian G J et al.[J].Chinese Physics,2006,15:199-202. |
| [22] | Sernelius B E;Berggren K F;Jin Z C et al.[J].Physical Review B,1988,37:10244-10248. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%