概述了紫外半导体电致发光器件的发展历史、现状、趋势及其应用,详述了国内外近两年对AlGaN基半导体电致发光器件的研究进展.
参考文献
| [1] | Toshio Nishida;Hisao Saito;Naoki Kobayashi .Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region[J].Applied physics letters,2001(25):3927-3928. |
| [2] | 徐叙.发光材料与显示技术[M].北京:化学工业出版社,2003:76. |
| [3] | A. Yasan;R. McClintock;K. Mayes;S. R. Darvish;H. Zhang;P. Kung;M. Razeghi;S. K. Lee;J. Y. Han .Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire[J].Applied physics letters,2002(12):2151-2153. |
| [4] | Hideki Hirayama;Atsuhiro Kinoshita;Takayoshi Yamabi;Yasushi Enomoto;Akira Hirata;Tsutomu Araki;Yasushi Nanishi;Yoshinobu Aoyagi .Marked enhancement of 320-360 nm ultraviolet emission in quaternary In_(x)Al_(y)Ga_(1-x-y)N with In-segregation effect[J].Applied physics letters,2002(2):207-209. |
| [5] | LiuR;Ponce F A;Dadgar A et al.Atomic arrangement at the AlN/Si (111) interface[J].Applied Physics Letters,2003,83(05):860. |
| [6] | Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes[J].Applied physics letters,2003(16):2565-2567. |
| [7] | NishidaT;Saito H;Kobayashi N .Subbmilliwatt,operation of AlGaN-based ultraviolet light emitting diode using short-period alloy superlattice[J].Applied Physics Letters,2001,78(04):399. |
| [8] | A. Chitnis;R. Pachipulusu;V. Mandavilli;M. Shatalov;E. Kuokstis;J. P. Zhang;V. Adivarahan;S. Wu;G. Simin;M. Asif Khan .Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm[J].Applied physics letters,2002(16):2938-2940. |
| [9] | Zhang JP.;Khan MA.;Sun WH.;Wang HM.;Chen CQ.;Fareed Q.;Kuokstis E. Yang JW. .Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm[J].Applied physics letters,2002(23):4392-4394. |
| [10] | Yamaguchi S.;Nitta S.;Amano H.;Akasaki I.;Kariya M. .Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(0):414-420. |
| [11] | Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities[J].Applied physics letters,2003(17):3507-3509. |
| [12] | First-principle study on GaN epitaxy on lattice-matched ZrB_(2) substrates[J].Applied physics letters,2003(13):2560-2562. |
| [13] | KimKH;Li J;Jin S X et al.Ⅲ -nitride ultraviolet lightemitting diodes with delta doping[J].Applied Physics Letters,2003,83(03):566. |
| [14] | Room-temperature epitaxial growth of GaN on conductive substrates[J].Applied physics letters,2003(15):3060-3062. |
| [15] | Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices[J].Applied physics letters,2003(18):3677-3679. |
| [16] | Influence of a GaN interfacial layer between n~(+)-GaN and active layer on the characteristics of blue light-emitting diodes[J].Applied physics letters,2003(7):1447-1449. |
| [17] | T. Akasaka;T. Nishida;Y. Taniyasu;M. Kasu;T. Makimoto;N. Kobayashi .Reduction of threading dislocations in crack-free AlGaN by using multiple thin Si_(x)Al_(1-x)N interlayers[J].Applied physics letters,2003(20):4140-4142. |
| [18] | Formation of vanadium-based ohmic contacts to n-GaN[J].Applied physics letters,2003(6):1154-1156. |
| [19] | High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN[J].Applied physics letters,2003(12):2372-2374. |
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