ADP晶体{100}面族生长的实时与非实时AFM(atomic force microscopy,AFM)研究表明,过饱和度σ处于0.005~0.04,生长温度介于293~313K之间时,晶面上观察到位错生长丘和其它晶体缺陷所形成的生长丘,晶面主要为台阶推进方式生长;位错生长丘上空洞的出现与位错弹性理论相符;随过饱和度σ降低,台阶形貌会发生相应变化;生长温度为298K时,台阶棱边能不小于6.2×10-7J/cm2.
参考文献
[1] | Arunmozhi G;Lanceros-Me' ndez S;de Matos Gomes E .[J].Materials Letters,2002,542:329-336. |
[2] | Voronov AP;Vyday YT;Salo VI;Puzikov VM;Bondarenko SI .Influence of thallium doping on scintillation characteristics of mixed KDP/ADP crystals[J].Radiation measurements,2007(4-5):553-556. |
[3] | Jayarama A;Dharmaprakash SM .Structural distortion in thiourea-mixed ADP crystals[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(2):944-949. |
[4] | Xu Dongli;Xue Dongfeng .[J].Journal of Crystal Growth,2006,286:108-113. |
[5] | 喻江涛,李明伟,王晓丁.ADP晶体{100}面族二维成核生长微观形貌的AFM研究[J].功能材料,2008(06):1034-1036,1039. |
[6] | Land TA.;De Yoreo JJ. .The evolution of growth modes and activity of growth sources on canavalin investigated by in situ atomic force microscopy[J].Journal of Crystal Growth,2000(1/4):623-637. |
[7] | Friedel J;Wang Y.Dislocations[M].北京:科学出版社,1980:29. |
[8] | Shangfeng Y;Genbo S;Jing T et al.[J].Journal of Crystal Growth,1999,203:425-433. |
[9] | Thomas T N;Land T A;Martin T et al.[J].Journal of Crystal Growth,2004,260:566-579. |
[10] | 闵乃本.晶体生长的物理基础[M].上海:上海科学技术出版社,1982 |
[11] | Deyoreo JJ.;Rashkovich LN.;Onischenko TA.;Lee JD.;Monovskii OV.;Zaitseva NP.;Land TA. .THE EFFECT OF DISLOCATION CORES ON GROWTH HILLOCK VICINALITY AND NORMAL GROWTH RATES OF KDP (1 0 1) SURFACES[J].Journal of Crystal Growth,1997(3/4):442-460. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%