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ADP晶体{100}面族生长的实时与非实时AFM(atomic force microscopy,AFM)研究表明,过饱和度σ处于0.005~0.04,生长温度介于293~313K之间时,晶面上观察到位错生长丘和其它晶体缺陷所形成的生长丘,晶面主要为台阶推进方式生长;位错生长丘上空洞的出现与位错弹性理论相符;随过饱和度σ降低,台阶形貌会发生相应变化;生长温度为298K时,台阶棱边能不小于6.2×10-7J/cm2.

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