用反应离化团束(RICB)法,以低分子量聚乙烯为蒸发材料,氨气为反应气体,在NaCl(100)和Si(100)衬底上淀积C—N薄膜。透射电子衍射(TEM)分析表明薄膜中含有β—C3N4晶粒,X射线光电子谱(XPS)和红外吸收谱(IR)表明薄膜中存在C、N原子的化学键合。
Carbon nitride thin films have been prepared by reactive ionized cluster beam (RICB)technique on Si(100)and NaCl(100) substrates, using low molecular weight polyethylene as evaporation material and ammonia as reactive gas. As revealed by transmission elec
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