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从对薄膜材料不断增长的性能要求出发,介绍了(Zr, Sn)TiO_4薄膜的晶体结构特征,主要阐述了其已有的制备工艺及电性能的研究进展.提出(Zr, Sn)TiO_4薄膜的制备方法将得到拓展和改进,指出了其今后的研究方向.

From the piont of the increasing requirement on the performance of thin film materials, the crystal structure, preparation technologies, electrical properties of (Zr, Sn)TiO_4 thin films were mainly summarized. It was proposed that the preparation methods would be extended and modified. And the reserch focus was also pionted out.

参考文献

[1] Ioachim A;Banciu MG;Toacsen MI;Nedelcu L;Ghetu D;Alexandru HV;Berbecaru C;Dutu A;Stoica G .High-k Mg-doped ZST for microwave applications[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(1):335-338.
[2] Ioachim A;Banciu MG;Toacsan MI;Nedelcu L;Ghetu D;Alexandru HV;Stoica G;Annino G;Cassettari M;Martinelli M .Nickel-doped (Zr-0.8, Sn-0.2)TiO4 for microwave and millimeter-wave applications[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2005(1/3):205-209.
[3] D.Houivet and J.E.Fallah .Phases in La2O3 and NiO doped (Zr,Sn)TiO4 microwave dielectric ceramics[J].Journal of the European Ceramic Society,1999(6/7):1095-1099.
[4] Huang CL.;Chen HL.;Weng MH. .Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics[J].Materials Chemistry and Physics,2001(1):17-22.
[5] Yuh-Ruey Wang;Sea-Fue Wang;Chung-Kai Wen .Low-fire of (Zr_(0.8)Sn_(0.2))TiO_4 with glass additives[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2006(1/2):143-146.
[6] Ahn Y S;Yoon K H;Kim E S .Effect of cooling rate on loss quality of (Zr_0.8,Sn_0 2)TiO_4 ceramics with additives[J].Journal of the European Ceramic Society,2003,23:2519-2523.
[7] Xiong Z X;Huang J R;Fang C et al.Hydrothermal synthesis of (Zr,Sn)TiO_4 nano-powders for microwave ceramics[J].Journal of the European Ceramic Society,2003,23:2515-2518.
[8] Warden W .Future semiductor material requirements and innovations as projected in the ITRS 2005 roadmap[J].Materials Science and Engineering B,2006,134:104-108.
[9] Kuo Y;Lu J;Tewg J Y .Tantalum nitride interface layer influence on dielectric properties of hafnium doped tantalum oxide high dielectric constant thin films[J].Japanese Journal of Applied Physics,2003,42(7A):L769-L771.
[10] Jun-Yen Tewg;Yue Kuo;Jiang Lu .Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films[J].Journal of the Electrochemical Society,2004(3):F59-F67.
[11] Cava R F;Peck W F;Krajewski J J .Enhancement of the dielectric constant of Ta_2O_5 through substitution with TiO_2[J].Nature(London),1995,377:215-217.
[12] Kudesia R;Snyder R L;Condrate R A et al.Struture study of (Zr_0.8Sn_0 2)TiO_4[J].Journal of Physics and Chemistry of Solids,1993,54(06):671-684.
[13] Cheng WX.;Ding AL.;Qiu PS.;He XY.;Zheng XSH. .Optical and dielectric properties of highly oriented (Zr-0.8,Sn-0.2)TiO4 thin films prepared by rf magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2003(1/4):136-142.
[14] Cheng W X;Ding A L;Qiu P S et al.Properties of (Zr_0.8Sn_0 2)TiO_4 thin films prepared by RF magnetron sputtering for microwave application[J].Microelectronic Engineering,2003,66:648-653.
[15] Hsu C H;Huang C L .Effect of annealing treatments on microstructure of (Zr_0.8Sn_0 2)TiO_4 thin films sputtered on silion[J].Thin Solid Films,2006,498:271-276.
[16] Cheng WX.;Ding AL.;Qiu PS.;He XY.;Zheng XS. .Optical and dielectric properties of (Zr-0.8,Sn-0.2)TiO4 thin films prepared by sol-gel process[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2003(1/3):382-385.
[17] Ru-Yuan Yang;Min-Hang Weng;Yan-Kuin Su .Effect of annealing temperatures on microstructure of (Zr_(0.8)Sn_(0.2))TiO_4 thin films grown by a sol-gel process[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2009(1/2):511-514.
[18] Yang RY;Su YK;Weng MH;Ho YS .Microstructure and electrical properties of (Zr, Sn)TiO4 thin film deposited on Si(100) using a sol-gel process[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(4):2203-2207.
[19] Ru-Yuan Yang;Hon Kuan;Min-Hang Weng .Effect of thermal treatment on the electrical properties of the sol-gel-derived (Zr,Sn)TiO_4 thin films[J].CERAMICS INTERNATIONAL,2009(1):77-81.
[20] Nistor M;Gherendi F;Magureanu M et al.(Zr,Sn)TiO_4 thin film for application in electronics[J].Applied Surface Science,2005,247:169-174.
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