获得高品质、低成本的直拉单晶硅是太阳能发电技术大面积推广应用的关键基础之一.本文采用有限元ANSYS软件模拟直拉单晶硅中液口距(导流筒下沿与液面距离,DSM)和器盖距(导流筒伸入加热器的距离,DSH)对单晶炉内气体流场和热场分布的影响.结果表明,随液口距的减小,气流对熔体液面上方的吹拂能力逐渐加强,有利于SiO的挥发;当液口距小于15 mm时,气流对熔体液面产生了扰动,不利于氧含量的降低.随器盖距的增加,一方面,熔体内轴向温度梯度逐渐减小,降低了坩埚底部的温度;另一方面,坩埚侧壁的温度也逐渐降低,特别是坩埚侧壁与坩埚底部结合处温度的降低,可以减少融入熔体中的氧.最终,将数值模拟的结果应用至拉晶生产中,获得了氧含量为1.10×1018 atoms/cm3的大直径(200 mm)太阳能级单晶硅,并使单炉拉晶时间比未优化前缩短了12.7 h.
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