采用改进的溶胶一凝胶技术,在Pt/Ti/TiO2/SiO2/Si(100)基片上制备了压电PZT薄膜,用XRD和APM技术分析了不同热处理工艺条件下PZT薄膜的微观形貌变化及相结构演化,系统测试了PZT薄膜的铁电性能.工艺-结构-性能研究结果表明:快速热处理工艺(RTA)有利于PZT薄膜保持较低的漏电流密度,热处理温度是影响晶粒大小的主要因素,而保温时间则对PZT薄膜的致密性、晶粒均匀度和晶界结合状态以及PZT薄膜的铁电性能有明显影响.在优化热处理条件下,PZT薄膜的剩余极化值(Pr)可达27μC/cm2,漏电流密度为10-7A/cm2.
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