采用籽晶辅助化学水浴沉积法,即先用磁控溅射法在硅片上制备c轴取向的ZnO薄膜,以此作为籽晶层,利用化学水浴沉积法制备ZnO纳米棒阵列.利用扫描电子显微镜(SEM)和X射线衍射(XRD),研究了ZnO薄膜籽晶层的沉积温度、水浴温度和前驱体溶液中Zn源的初始浓度等对ZnO纳米棒阵列生长的影响,由此得到了结晶性好且几乎垂直于衬底方向的ZnO纳米棒阵列的生长条件,为制备基于ZnO纳米棒阵列的器件提供了条件.
ZnO nanorod arrays were prepared by seed-assisted chemical bath deposition, in which the c-axis oriented ZnO films prepared by magnetron sputtering were used as the seed layers. By means of scanning electron microscopy (SEM) and X-ray diffraction (XRD), we investigated the effects of deposition temperature of ZnO seed layer, chemical bath temperature and initial concentration of Zn source in precursor solution on the growth of ZnO nanorod arrays. As a result, the appropriate conditions for the growth of well crystallized ZnO nanoraod arrays which were nearly perpendicular to the substrate were defined.
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