欢迎登录材料期刊网

材料期刊网

高级检索

应用第一原理方法研究通过元素掺杂来抑制SnBi无铅焊料中Bi的电迁移问题.在SnBi体系中掺杂zn和Sb元素,通过用近弹性带方法计算掺杂体系中Bi元素的扩散能垒.结果表明:加入Sb之后,Bi的扩散能垒由原来的0.32 eV升高到0.46 eV,扩散激活能由原来的1.14 eV升高到1.18 eV;加入Zn后,Bi的扩散能垒由原来的0.32 eV升高到0.48 eV,扩散激活能由原来的1.14 eV升高到1.22 eV.由此可得,Zn和Sb的加入都能够提高Bi的扩散激活能,起到抑制扩散的作用.通过分析态密度可知:加入Zn和Sb后,体系中Sb与Bi的p态曲线几乎完全重合,比Sn与Bi的p态曲线重合度高很多,说明sb和Bi的共价键作用很强,且比Sn-Bi的共价键作用强,从而增加Bi的扩散能垒.同样,Zn和Bi的p态曲线重合度也比Sn和Bi的曲线重合度高很多,表明Zn-Bi的共价键同样比sn-Bi的共价键强,所以Zn的加入同样增加Bi的扩散能垒.总结说来,Sb和zn的掺杂能够抑制SnBi焊料中Bi的电迁移.

参考文献

[1] C. Basaran;H. Ye;D. C. Hopkins;D. Frear;J. K. Lin .Failure Modes of Flip Chip Solder Joints Under High Electric Current Density[J].Journal of Electronic Packaging: Transactions of the ASME,2005(2):157-163.
[2] T.L.Shao;K.C.Lin;Chih Chen .Electromigration studies of Flip Chip Sn95/Sb5 Solder Bumps on Cr/Cr-Cu/Cu Under-Bump Metallization[J].Journal of Electronic Materials,2003(11):1278-1283.
[3] Liu YH;Lin KL .Damages and microstructural variation of high-lead and eutectic SnPb composite flip chip solder bumps induced by electromigration[J].Journal of Materials Research,2005(8):2184-2193.
[4] Nah JW;Ren F;Tu KN;Venk S;Camara G .Electromigration in Pb-free flip chip solder joints on flexible substrates[J].Journal of Applied Physics,2006(2):23520-1-23520-6-0.
[5] Ding M;Wang GT;Chao B;Ho PS;Su P;Uehling T .Effect of contact metallization on electromigration reliability of Pb-free solder joints[J].Journal of Applied Physics,2006(9):94906-1-94906-6-0.
[6] Toru Miyazaki;Tomoya Omata .Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps[J].Microelectronics and reliability,2006(9/11):1898-1903.
[7] Zeng K.;Tu KN. .Six cases of reliability study of Pb-free solder joints in electronic packaging technology [Review][J].Materials Science & Engineering, R. Reports: A Review Journal,2002(2):55-105.
[8] NAH J W;KIM J H;LEE H M;PAIK K W .Electromigration in flip chip solder bump of 97Pb-3Sn/37-63Sn combination structure[J].Acta Materialia,2004,52:129-136.
[9] C. Y. Liu;Chih Chen;K. N. Tu .Electromigration in Sn-Pb solder strips as a function of alloy composition[J].Journal of Applied Physics,2000(10):5703-5709.
[10] Yeh YT;Chou CK;Hsu YC;Chen C;Tu KN .Threshold current density of electromigration in eutectic SnPb solder[J].Applied physics letters,2005(20):3504-1-3504-3-0.
[11] Shao TL;Chen YH;Chiu SH;Chen C .Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni(P)/Au metallization pads[J].Journal of Applied Physics,2004(8):4518-4524.
[12] LEE T Y;TU K N;FREAR D R .Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallizatiun[J].Journal of Applied Psychology,2001,90:4502-4508.
[13] Long-tai Chen;Chih-ming Chen .Electromigration study in the eutectic SnBi solder joint on the Ni/Au metallization[J].Journal of Materials Research,2006(4):962-969.
[14] X.F. Zhang;J.D. Guo;J.K. Shang .Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect[J].Scripta materialia,2007(6):513-516.
[15] HUNG Y M;CHEN C C .Electromigration of Sn-9wt.% Zn Solder[J].Journal of Electronic Materials,2008,37:887-893.
[16] 杨启亮 .电迁移导致SnBi焊料互连结构中的界面转变:溶质偏析及其抑制和金属间化合物的形成[D].中国科学院金属研究所,2009.
[17] CHEN C M;HUANG C C .Efffects of silver doping on clectromigration of eutectic SnBi solder[J].Journal of Alloys and Compounds,2008,461:235-241.
[18] HOHENBERG P;KOHN W .Inhomogeneous electron gas[J].Physical Review B,1964,136:B864-B871.
[19] KOHN W;SHAM L J .Quantum density oscillations in an inhomogeneous electron gas[J].Physical Review A,1965,137:1697-1705.
[20] VERDERBILT D .Soft self-consistent pseudopotentials in a generalized eigenvalue formalism[J].Physical Review B,1990,41:7892-7895.
[21] PERDEW J P;CHEVARY J A;VOSKO S H;JACKSON K A PEDERSON M R SINGH D J FIOLHAIS C .Atoms,molecules,solids,and surfaces:Applications of the generalized gradient approximation for exchange and correlation[J].Physical Review B,1992,46:6671-6687.
[22] KRESSE G .Ab-initio molecular-dynamics for liquid-metals[J].Journal of Non-Crystalline Solids,1995,193:222-229.
[23] PRESS W H;FLANNERY B P;TEUKOLSKY S A;VETTERLING W T.Numerical recipes[M].New York:cambridge University Press,1986:1-15.
[24] CULOT P;DIVE G;NGUYEN V H;GHUYSEN J M .A Quasi-Newton algorithm for lst-order saddle-point location[J].Theoretica Chimica Acta,1992,82:189-205.
[25] MONKHORST H J;PACK J D .Special points for brillouin-zone integrations[J].Physical Review B,1976,13:5188-5192.
[26] HUNTINGTON H B;GRONE A R .Current-induced marker motion in gold wires[J].Journal of Physics and Chemistry of Solids,1961,20:76-87.
[27] BARRETT C S;MASSALSKI T B.Structure of metals[M].New York:McGraw-Hill,1966:88-90.
[28] JIANG Y;SMITH J R;EVANS A G .Activity coefficients for dilute solid solutions of Al in Ni[J].Scripta Materialia,2006,55:1147-1150.
[29] YU C;LU H .First-principles calculations of the effects of Cu and Ag additions on the electromigration of Sn-based solder[J].Journal of Applied Physics,2007,102:054904/1-054904/4.
[30] Brook Chao;Seung-Hyun Chae;Xuefeng Zhang .Investigation of diffusion and electromigration parameters for Cu-Sn intermetallic compounds in Pb-free solders using simulated annealing[J].Acta materialia,2007(8):2805-2814.
[31] HUANG F H;HUNTINGTON H B .Diffusion of Sb123,Cd109,Sn113,and Zn 65 in tin[J].Physical Review B,1974,9:1479-1488.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%