材料期刊网

参考文献

{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"简要评述超核物理学近几年的发展, 包括常规超核和非常规超核两个方面. 对于包含通常超子的常规超核, 重点介绍近来在日本KEK完成的一批超核实验及其理论分析. 对其中关于超子杂质效应和超子平均自由路程等实验测量结果进行了理论分析, 得到一些有意义的结果. 并对奇异数为S=-2的Ξ超核的结构和性质进行了若干研究. 对于包含C夸克或B夸克的其他味超核, 以及可能的包含pentaquark的θ+超核也做了适当的介绍.","authors":[{"authorName":"李磊","id":"c13af48a-87d7-49f8-892b-286ae0ba0c28","originalAuthorName":"李磊"},{"authorName":"谭玉红","id":"36367c3b-b7d9-418b-94a3-2bc47491f37c","originalAuthorName":"谭玉红"},{"authorName":"王秋玲","id":"f312595e-7add-42d1-ac66-3afffe143737","originalAuthorName":"王秋玲"},{"authorName":"罗延安","id":"130d178c-fb0c-417f-8fd8-e45a0d776b51","originalAuthorName":"罗延安"},{"authorName":"钟显辉","id":"436cb578-72dd-47a9-b1cf-1eeb6ef02a9a","originalAuthorName":"钟显辉"},{"authorName":"宁平治","id":"2004b996-f8a6-4b1a-8d9c-5a6a4ed63751","originalAuthorName":"宁平治"}],"doi":"10.3969/j.issn.1007-4627.2004.04.007","fpage":"289","id":"ca7fa394-94b3-4e6e-8401-b329e3648d8f","issue":"4","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"0b9a39a4-0765-4afd-8be1-a478b157b1f0","keyword":"超核","originalKeyword":"超核"},{"id":"4771e196-8092-4c0e-ac3d-e3d30e290f70","keyword":"杂质效应","originalKeyword":"杂质效应"},{"id":"98ffad1e-baf1-4961-9922-5095c5474916","keyword":"平均自由路程","originalKeyword":"平均自由路程"},{"id":"9c8fbd69-f9c9-497f-8b59-f8058bc481fa","keyword":"味超核","originalKeyword":"味超核"},{"id":"d9d7aaf4-cc2f-4174-8815-83241b604ded","keyword":"θ+超核","originalKeyword":"θ+超核"}],"language":"zh","publisherId":"yzhwlpl200404007","title":"超核物理学进展","volume":"21","year":"2004"},{"abstractinfo":"重费米子材料CeCoIn5具有相似于高温铜氧化物和铁基超导体的奇异物性,大量实验揭示其超导电性可能由反铁磁自旋涨落引起,表现出d波非常规超导配对态.在本文中,我们从CeCoIn5的双能带模型出发,通过考虑杂质散射效应,应用T矩阵近似和格林函数方法,在弱散射和强散射情况下,分别计算费米能级附近的局域电子密度态性质.我们发现杂质诱导的共振态局域在杂质周围,其空间调制结构强烈依赖于d波配对序参量的节线方向,这些新奇物性有助于确认其dx-2y2波配对对称性.","authors":[{"authorName":"刘斌","id":"545ec915-887a-4fc6-80fb-acbda83d20f8","originalAuthorName":"刘斌"},{"authorName":"张鸽","id":"e017be70-5456-4c55-aec1-07e6869c4d8d","originalAuthorName":"张鸽"}],"doi":"","fpage":"67","id":"1e7cc2c5-1151-4598-9af4-2e6c632193e1","issue":"3","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"574bfc02-0bb9-45a7-8dfa-d58cabe37e46","keyword":"配对对称性","originalKeyword":"配对对称性"},{"id":"6edb3f5c-675c-4e73-815a-b9440500361a","keyword":"杂质效应","originalKeyword":"杂质效应"},{"id":"cfb4d19d-a24a-4dc6-92f6-a685f94fc9cb","keyword":"重费米子超导体","originalKeyword":"重费米子超导体"}],"language":"zh","publisherId":"dwwlxb201603012","title":"重费米子超导体CeCoIn5中的局域电子结构研究","volume":"38","year":"2016"},{"abstractinfo":"随着高纯材料的需求日益增大,分析这种材料的辉光放电质谱技术也在不断的完善,其中一个困扰业界的问题就是记忆效应.本文采用辉光放电质谱法在分析锌样品前后分别两次测定了超高纯铜样品中10种痕量杂质(Mg、Al、Cr、Mn、Fe、Ni、Zn、As、Hg、Pb).结果表明,两次测定结果基本一致,尤其是两次测定所得痕量锌含量结果一致,说明改变样品基体时,采用只清洗辉光放电池的方法可消除记忆效应.","authors":[{"authorName":"","id":"14cc97e5-8cb6-4525-94eb-dd31832192bc","originalAuthorName":""}],"doi":"","fpage":"22","id":"a1db24f8-8187-4bdc-8458-570a9dd99859","issue":"9","journal":{"abbrevTitle":"YJFX","coverImgSrc":"journal/img/cover/YJFX.jpg","id":"71","issnPpub":"1000-7571","publisherId":"YJFX","title":"冶金分析 "},"keywords":[{"id":"2dc628be-de63-4ff2-b21a-d450f5256bf4","keyword":"超高纯铜","originalKeyword":"超高纯铜"},{"id":"aeefdf05-54d1-4d0e-bea2-72f7951add99","keyword":"辉光放电质谱法","originalKeyword":"辉光放电质谱法"},{"id":"edf7b21d-4268-45a5-a1d9-2d0f4b98dbd1","keyword":"记忆效应","originalKeyword":"记忆效应"}],"language":"zh","publisherId":"yjfx201109005","title":"辉光放电质谱法测定超高纯铜中痕量杂质的记忆效应研究","volume":"31","year":"2011"},{"abstractinfo":"对应变闪锌矿(001)取向GaN-AlxGa1-x N量子阱系统,采用变分法讨论了流体静压力对束缚于界面附近的浅杂质态结合能的影响.计算结果表明,考虑压力对单轴、双轴应变的调制及电子有效质量,材料介电常数及禁带宽度的影响,杂质态的结合能随压力呈线性变化.由简化相干势近似法讨论了垒材料AlxGa1-xN中Al组分对杂质态结合能的影响.结果表明,在阱宽和压力固定时,当Al组分增加时杂质态结合能会逐渐增加;且压力较大时结合能随组分的增加更加显著.Al组分的增加使电子的二维特性增强,从而使结合能增大.","authors":[{"authorName":"温淑敏","id":"b5313f85-ce42-4476-a9a9-67ca602f2ea8","originalAuthorName":"温淑敏"},{"authorName":"赵春旺","id":"5f754fb9-646a-4dff-ab12-e5cb41593a88","originalAuthorName":"赵春旺"},{"authorName":"王细军","id":"3043df4c-8504-4431-bf59-905f9fe81369","originalAuthorName":"王细军"}],"doi":"","fpage":"97","id":"608295d5-9ebc-4e3f-973e-bb6a8f41508b","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"d32c2f72-24c2-48b4-8b23-0e5ce0bbc160","keyword":"GaN-AlxGa1-xN量子阱","originalKeyword":"GaN-AlxGa1-xN量子阱"},{"id":"cd031bc1-7fa1-449d-86e6-9f6093025153","keyword":"杂质态","originalKeyword":"杂质态"},{"id":"93924558-293a-430f-bc16-5341cc469c21","keyword":"结合能","originalKeyword":"结合能"},{"id":"010d67d7-5bf7-4312-8f11-2a0b7f153473","keyword":"压力","originalKeyword":"压力"},{"id":"fcfdca7e-3122-4d65-9261-56bc70e8a9f1","keyword":"应变","originalKeyword":"应变"}],"language":"zh","publisherId":"gncl2010z1024","title":"应变量子阱中杂质态结合能的压力效应","volume":"41","year":"2010"},{"abstractinfo":"本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.","authors":[{"authorName":"赵传阵","id":"aa4fb507-25a8-41a8-9587-b70e72e3c314","originalAuthorName":"赵传阵"},{"authorName":"唐吉玉","id":"6d814930-2b67-4b27-8f35-9c3bea3216ef","originalAuthorName":"唐吉玉"},{"authorName":"文于华","id":"146872ab-0cf1-4a7d-bdb8-e125ad4a45e8","originalAuthorName":"文于华"},{"authorName":"吴靓臻","id":"521a64a1-f3ac-4edc-b45d-8834acbdff8e","originalAuthorName":"吴靓臻"},{"authorName":"孔蕴婷","id":"c318d171-e4a4-4c56-8ae8-32a8a70b9126","originalAuthorName":"孔蕴婷"}],"doi":"10.3969/j.issn.1000-3258.2007.01.013","fpage":"57","id":"fa8ba7ca-563c-4ee5-8022-fd7f73c61abb","issue":"1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"9e676fa4-b61a-4c3e-b813-5f91ad6b4afb","keyword":"硅锗合金","originalKeyword":"硅锗合金"},{"id":"2a278918-f235-40cb-89c8-3321c1462dbf","keyword":"少数载流子","originalKeyword":"少数载流子"},{"id":"773ea21b-7a2f-4a34-a20f-aba26cb9d1e9","keyword":"低温特性","originalKeyword":"低温特性"},{"id":"6bb68970-4bf4-46a2-ace6-c7bd0a7bab0b","keyword":"掺杂浓度","originalKeyword":"掺杂浓度"}],"language":"zh","publisherId":"dwwlxb200701013","title":"应变Si1-xGex层中p型杂质电离常温和低温特性","volume":"29","year":"2007"},{"abstractinfo":"建立了一种高纯金中36种杂质元素的电感耦合等离子体质谱测定方法,通过加入内标元素Sc、Cs和Re,以及采用加入校正的方式,有效地补偿了测定中的基体效应.仪器检测限为0.000 4～0.123 1μg/mL,方法检测限为0.2～2.0μg/g,加入标准物质的回收率为91%～117%,分析精密度为0.35%～4.80%.","authors":[{"authorName":"陈永红","id":"dfe6aba2-d2ff-4c43-ad23-c39554fce245","originalAuthorName":"陈永红"},{"authorName":"黄蕊","id":"2fb4e532-582e-4478-a44b-9e7d88a4ff09","originalAuthorName":"黄蕊"},{"authorName":"陈菲菲","id":"cd09cb7b-868f-4297-99b3-8b3426efadf9","originalAuthorName":"陈菲菲"},{"authorName":"张雨","id":"335c4cc6-053b-4eb0-8af0-64dcab60a804","originalAuthorName":"张雨"}],"doi":"10.3969/j.issn.1001-1277.2009.04.013","fpage":"43","id":"00a5fef8-ef18-4e0e-a2f2-3cdd7471d8d3","issue":"4","journal":{"abbrevTitle":"HJ","coverImgSrc":"journal/img/cover/HJ.jpg","id":"44","issnPpub":"1001-1277","publisherId":"HJ","title":"黄金"},"keywords":[{"id":"f000b2bc-a8ff-4735-af00-c42a67c80dd8","keyword":"电感耦合等离子体质谱","originalKeyword":"电感耦合等离子体质谱"},{"id":"219b2c54-c070-415f-8f80-c50d97220e64","keyword":"内标法","originalKeyword":"内标法"},{"id":"18aa182b-22c1-454c-9019-212f15d61570","keyword":"加入校正法","originalKeyword":"加入校正法"},{"id":"6793da82-df8f-4dcd-ba17-59d1534d839c","keyword":"高纯金","originalKeyword":"高纯金"}],"language":"zh","publisherId":"huangj200904013","title":"ICP-MS测定高纯金中的杂质元素","volume":"30","year":"2009"},{"abstractinfo":"用ICP-MS法同时测定钨精矿中Sn,P,Ca,Nb,Ta,Mo,Cu,Pb,Zn,As,Mn,Bi,Fe,Sb14种杂质元素含量.钨精矿试样经NaOH-Na2O2碱熔后,加入硝酸,钨以钨酸的形式从溶液中沉淀而分离,消除了钨基体的干扰.在样品溶液中加入内标元素45Sc,115In,205Tl,采用内标法进行校正,有效克服了基体效应、接口效应及仪器波动所产生的影响;通过优化仪器工作参数,选择适当待测元素的同位素,有效地克服了因质谱干扰所带来的影响.该方法加标回收率为90.5%～101.5%,相对标准偏差为1.2%～7.8%,分析结果与国家标准方法结果相吻合,具有快速、简便、准确等特点,可用于钨精矿及钨产品中杂质元素分析.","authors":[{"authorName":"黄冬根","id":"4a5aac9b-e5b1-4654-b41a-15094c8e9784","originalAuthorName":"黄冬根"},{"authorName":"廖世军","id":"aa835905-825a-4b19-aa6a-d97fa935f396","originalAuthorName":"廖世军"},{"authorName":"章新泉","id":"f5a920ca-e573-4a95-87d3-c708db0d569c","originalAuthorName":"章新泉"},{"authorName":"童迎东","id":"e93b0b9c-f0ea-4a11-ad6b-8285d614ab98","originalAuthorName":"童迎东"}],"doi":"10.3969/j.issn.1000-7571.2005.02.011","fpage":"42","id":"9012231f-88f3-484a-a07f-418fda4ad6da","issue":"2","journal":{"abbrevTitle":"YJFX","coverImgSrc":"journal/img/cover/YJFX.jpg","id":"71","issnPpub":"1000-7571","publisherId":"YJFX","title":"冶金分析 "},"keywords":[{"id":"e208bd45-c156-4b8f-be6f-12ad7d78022e","keyword":"ICP-MS","originalKeyword":"ICP-MS"},{"id":"6b0cd5c7-4029-4692-8671-609f5a99ad10","keyword":"钨精矿","originalKeyword":"钨精矿"},{"id":"06fbdbc7-f43b-4dde-9b94-06f90d684c56","keyword":"杂质元素","originalKeyword":"杂质元素"},{"id":"73074a63-9269-419f-8f93-9c0e76d68604","keyword":"内标法","originalKeyword":"内标法"}],"language":"zh","publisherId":"yjfx200502011","title":"ICP-MS法测定钨精矿中杂质元素","volume":"25","year":"2005"},{"abstractinfo":"采用球壳结构和渐变有限深谐振子势阱模型,利用镜像电荷的方法分析了不同介电常数下,界面效应对半导体量子点异质结中类氢杂质电子束缚能级的扰动情况.通过计算考虑到杂质对电子的束缚作用前后的电子的基态能,可以看出对于处在弱受限情况下的量子点,异质结厚度在小于10 nm时,界面效应对类氢杂质电子束缚能级的影响明显.当异质结壳层厚度增大的时候,界面效应的影响将逐渐减弱,受扰动的基态能也逐渐减小,最后不同Airy函数零点值所对应的基态能趋向于某一固定值,此时界面效应可以忽略.","authors":[{"authorName":"郭富胜","id":"8e47de5d-f0c7-4808-97b9-4581ac496e11","originalAuthorName":"郭富胜"},{"authorName":"赵铧","id":"2b787f98-90fc-437c-8527-60fcfdbbb651","originalAuthorName":"赵铧"},{"authorName":"朱孟兆","id":"a059ceef-f473-49ad-a4aa-794be4dfa328","originalAuthorName":"朱孟兆"},{"authorName":"李韦","id":"2dbc0c61-4519-40aa-9089-44a374cd671f","originalAuthorName":"李韦"}],"doi":"10.3969/j.issn.1007-5461.2007.06.012","fpage":"721","id":"82e1fe5f-9064-449a-9d1e-ed9dace60fde","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"bd62a658-b7cf-4b4a-a5cb-f3fb60df92ee","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"9d13f7b7-a288-442d-93b7-018e105b0a74","keyword":"量子点异质结","originalKeyword":"量子点异质结"},{"id":"4171a03a-bf65-471e-8a56-a832ba69d5c1","keyword":"界面效应","originalKeyword":"界面效应"},{"id":"23c599c2-695c-4714-a15c-1ce076cb28d9","keyword":"渐变势阱","originalKeyword":"渐变势阱"},{"id":"634d78f5-bdab-4471-ba66-f27515536da3","keyword":"镜像电荷法","originalKeyword":"镜像电荷法"}],"language":"zh","publisherId":"lzdzxb200706012","title":"量子点异质结中类氢杂质电子束缚能级的计算","volume":"24","year":"2007"},{"abstractinfo":"研究了用ICP-AES法测定氧化铁粉中15种杂质元素的方法,建立了最佳工作条件,测定了方法的检出限、测定下限.进行了干扰试验、回收率试验、基体效应等试验,本方法快速、准确,结果令人满意.","authors":[{"authorName":"刘琰","id":"a8aa6ad7-b92b-4c01-bb21-fe2b86dc2e61","originalAuthorName":"刘琰"},{"authorName":"阚斌","id":"dab9862e-8d73-4690-9efa-58b52004e61a","originalAuthorName":"阚斌"},{"authorName":"陈健","id":"e5b7c209-2b8a-4289-827c-62a50e36d04f","originalAuthorName":"陈健"}],"doi":"10.3969/j.issn.1000-7571.2004.z1.039","fpage":"135","id":"bbf89e77-758c-4900-8bd0-04c5587df910","issue":"z1","journal":{"abbrevTitle":"YJFX","coverImgSrc":"journal/img/cover/YJFX.jpg","id":"71","issnPpub":"1000-7571","publisherId":"YJFX","title":"冶金分析 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