报道了以SiCl4和H2为气源,用等离子体增强化学气相沉积技术,在小于300℃的低温下快速生长多晶硅薄膜.实验发现, 生长速率强烈依赖于放电功率、H2/SiCl4流量比和衬底温度, 而薄膜的晶化度只依赖于放电功率和H2/SiCl4流量比,与衬底温度的关系不大.通过控制和选择工艺条件,我们获得了生长速率高达0.35nm/s,晶化度高于75%的多晶硅薄膜.薄膜的暗电导率和光电导率分别达到10-4S-1·cm-1和10-3S-1·cm-1.
参考文献
| [1] | Werner J H;Bergmann R B.Technical Digest of the international[C].PVSEC-11,1999:923. |
| [2] | Shirai H.;Sakuma Y.;Moriya Y.;Fukai C. .Growth kinetics of nanocrystalline silicon from SiH2Cl2 by plasma-enhanced chemical vapor deposition[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2000(Pt.A):131-135. |
| [3] | Fukai C et al.[J].Japanese Journal of Applied Physics,1999,38:1554. |
| [4] | Liu H P et al.[J].Japanese Journal of Applied Physics,2001,40:1215. |
| [5] | Lin X Y;Huang C J;Lin K X.[A].USA,2001:1392. |
| [6] | 黄创君,林璇英,林揆训,余云鹏,余楚迎,池凌飞.SiCl4-H2为气源低温制备多晶硅薄膜[J].功能材料,2002(06):650-652. |
| [7] | 林璇英,黄创君,林揆训,余运鹏,余楚迎,池凌飞.Low-Temperature Growth of Polycrystalline silicon Films by SiCl4/H2 rf Plasma Enhanced Chemical Vapour Deposition[J].中国物理快报(英文版),2003(10):1879-1882. |
| [8] | 林璇英;林揆训 等.[J].功能材料,1992,23(05):280. |
| [9] | Ikeda T et al.[J].Journal of Non-Crystalline Solids,1996,198-200:987. |
| [10] | Sakai T et al.[J].Japanese Journal of Applied Physics,1993,32:3089. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%