采用脉冲激光沉积法在FTO基片上制备铌酸银薄膜,并运用XRD、UV-Vis和AFM等方法对薄膜样品进行表征和分析.研究了薄膜的光电化学性质.结果表明,样品含有Ag2Nb4O11和AgNbO3两相.其光电化学研究结果表明在低偏压区有较大的光电流密度.另外,混合相薄膜的最大光电流和稳态光电流的比值Ip/IS小于纯相AgNbO3薄膜的值,此结果说明混相薄膜具有较低的表面电子空穴复合率.
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