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由于纳米结构半导体硫化铜具有独特的物化性质,使其在光电材料方面得到广泛应用。本文根据国内外的最新研究进展介绍了水热法和溶剂热法制备硫化铜各种形貌的影响因素:反应物质、溶剂、反应温度、反应时间。同时介绍了不同形貌的带隙能及降解有机污染物的研究情况。还介绍了其复合材料在光降解有机物的研究进展。最后对硫化铜纳米晶体材料的能带值的可能影响因素及应用前景做了展望,以期对该领域的研究有一定的帮助。

Because the nanostructure semiconductor metal sulfide has the unique physical and chemical properties, making it apply in photoelectric material. Therefore, according to the latest research progress at home and abroad, this paper has a detailed introduces of the factors affecting copper sulfide nanostructures, such as material, solvent, reaction temperature, reaction time. At the same time, we introduced band gap of the different morphology and the research progress of degradation of organic pollutants. Also we introduced the research progress of composite materials photocatalytic degradation of organic matter. Finally, in order to make some achievements on this field has certain help, the affecting factors of the band gap and application prospect of CuS were discussed.

参考文献

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