采用MPCVD法,以氢气和四甲基硅烷为先驱气体,YG6硬质合金刀片为基体材料,在不同沉积温度下制备了SiC涂层;并选用致密连续且附着性能优良的SiC涂层作为过渡层制备金刚石涂层.使用场发射扫描电镜、能谱仪和掠X射线衍射仪对SiC涂层和金刚石涂层的形貌和组成进行了分析,并对SiC涂层和金刚石涂层的附着力进行测试.结果表明,随着沉积温度升高,SiC涂层先由团聚在一起的β-SiC微晶相先转变为颗粒状和片状β-SiC,进而转变为团聚在一起的非晶态的SiC晶须;SiC涂层的厚度呈递增、致密度呈现先增强后减弱、表面粗糙度整体呈现先减小后增大、附着力呈先升高后降低的趋势.沉积温度为800℃时制备的片状SiC涂层与硬质合金基体有着良好的结合强度,将其作为过渡层时,能够在硬质合金表面制备出均匀、连续、致密的且附着力良好的金刚石涂层.
参考文献
| [1] | 吕反修,宋建华,唐伟忠,黑立富.金刚石膜涂层硬质合金工具研究进展及产业化前景[J].热处理,2008(01):2-11. |
| [2] | 黑鸿君,于盛旺,刘艳青,丁明辉,李义锋,唐伟忠.四甲基硅烷流量对硬质合金表面沉积的SiC涂层的影响[J].人工晶体学报,2013(03):402-407. |
| [3] | W. Tang;Q. Wang;S. Wang .Adherent diamond coatings on cemented carbide substrates with different cobalt contents[J].Diamond and Related Materials,2001(9-10):1700-1704. |
| [4] | E.X. Lu;W.Z. Tang;Y.M. Tong .Novel pretreatment of hard metal substrate for better performance of diamond coated cutting tools[J].Diamond and Related Materials,2006(11/12):2039-2045. |
| [5] | F. H. Sun;Z. M. Zhang;M. Chen;H. S. Shen .Improvement of adhesive strength and surface roughness of diamond films on Co-cemented tungsten carbide tools[J].Diamond and Related Materials,2003(3-7):711-718. |
| [6] | 耿春雷,黑立富,刘素田,唐伟忠,吕反修.硬质合金微型钻头金刚石涂层预处理工艺对其断裂强度的影响[J].金刚石与磨料磨具工程,2006(06):36-41. |
| [7] | C.L. Geng;W.Z. Tang;L.F. Hei .Fracture strength of two-step pretreated and diamond coated cemented carbide microdrills[J].International Journal of Refractory Metals & Hard Materials,2007(2):159-165. |
| [8] | Synthesis of micro- or nano-crystalline diamond films on WC-Co substrates with various pretreatments by hot filament chemical vapor deposition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2010(13):p.4357. |
| [9] | Yu, X.;Liu, Y.;Ma, L.;Yang, G.;Wang, C..Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2013:53-56. |
| [10] | 黑鸿君,于盛旺,刘艳青,丁明辉,李义锋,唐伟忠.四甲基硅烷流量对硬质合金表面沉积的SiC涂层的影响[J].人工晶体学报,2013(03):402-407. |
| [11] | 于盛旺,黑鸿君,胡浩林,范朋伟,张思凯,唐伟忠,吕反修.不同压力下硬质合金表面微波等离子体化学气相沉积SiC涂层规律性的研究[J].人工晶体学报,2011(04):876-881. |
| [12] | 张长瑞,刘荣军,曹英斌.沉积温度对CVD SiC涂层显微结构的影响[J].无机材料学报,2007(01):153-158. |
| [13] | Sheng-Wang Yu;Peng-Wei Fan;Wei-Zhong Tang;Xiao-Jing Li;Hao-Lin Hu;Hong-Jun Hei;Si-Kai Zhang;Fan-Xiu Lu .Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates[J].Thin Solid Films,2011(2):828-832. |
| [14] | Veintemillas S.;Rodriguezclemente R.;Figueras A.;Madigou V. .THERMODYNAMIC ANALYSIS OF METALORGANIC CHEMICAL VAPOUR DEPOSITION OF SIC USING TETRAMETHYLSILANE AS PRECURSOR .1. IDENTIFICATION OF THE MAIN REACTIONS[J].Journal of Crystal Growth,1995(4):383-389. |
| [15] | Seong-Min Jeong;Kyung-Hun Kim;Young Joon Yoon;Myung-Hyun Lee;Won-Seon Seo .Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature[J].Journal of Crystal Growth,2012(C):48-52. |
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