在工作气压为 0.80Pa的氧氩气混合气氛下,改变氧与氩的流量比 (O2/Ar:0.10, 0.20, 0.30),在预先镀 10nm左右 SiO2的普通玻璃基片上用直流( D.C.)磁控溅射法制备了 300nm左右的 TiO2薄膜试样.离线在 500℃、氧气氛下对试样热处理 2h.用 X射线光电子能谱( XPS)和 X射线衍射仪( XRD)分别研究了试样热处理前后的表面元素组成、离子状态和物相组成,用接触角分析仪测试了试样在紫外光 (UV)照射后的水润湿角.
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