采用激光脉冲分子束外延技术,在(100)取向的SrTiO3单晶基片上成功外延生长了LaAlO3/BaTiO3超晶格薄膜.在超晶格薄膜生长过程中,采用高能电子衍射技术(RHEED)对LaAlO3/BaTiO3超晶格薄膜的生长过程以及平面晶格变化进行了分析.通过对超晶格薄膜中各层RHEED衍射条纹的分析计算发现超晶格薄膜存在一个临界厚度,其值约为17nm,当超晶格薄膜的厚度小于该临界厚度时,晶格畸变在逐渐增加,当厚度超过该临界厚度时,晶格畸变因弛豫现象的产生而逐渐减小.超晶格薄膜中不同层的RHEED衍射条纹的差别说明了由于不同应力的作用使超晶格薄膜中LAO层和BTO层表面粗糙度不同.
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