采用射频(RF)磁控溅射法制备稀土掺杂铁氧化物La_(0.3)Sr_(0.7)FeO_3 (LSFO)薄膜.电阻-温度关系表明,薄膜在测量温度范围内呈现半导体导电特性,其主要源于Fe~(3+)和Fe~(5+)离子的电荷有序排列,同时薄膜在250 K时发生电荷有序态转变.激光作用诱导薄膜电阻减小,且光致电阻相对变化在190 K时取得极大值为56.3%.利用变程跳跃模型对电阻温度曲线进行分析讨论,表明激光作用的内在机制是激光辐照诱导电子退局域化.
La_(0.3)Sr_(0.7)FeO_3 (LSFO) thin films were prepared by RF magnetron sputtering method. The resistance-temperature relation shows that the film favors the semiconductive conduction in the testing temperature range, which arises from the charge ordering of Fe~(3+) and Fe~(5+) ions. The charge ordering transition happened at T=250 K. The laser irradiation induces a decrease of the resistance of the film and the maximum relative change in the photoinduced resistance is about 56.3% at T=190 K. The analysis of the resistance-temperature relation using the variable range hoping (VRH) model shows that the intrinsic mechanism of the laser irradiation is the delocalization of the electrons.
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