用射频磁控溅射法在玻璃衬底上制备出SnO2:Sb薄膜,研究了不同掺杂和退火对薄膜结构的影响.制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为(110).室温下光致发光测量首次观测到392 nm附近存在紫外-紫光发射,并对SnO2:Sb的光致发光机制进行了探索性研究.
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