金丝球焊是电子工业中应用最广泛的引线键合技术，但随着高密度封装的发展，铜丝球焊日益引起人们的关注。本文采用热压超声丝球键合的方法，将直径50μmCu引线键合到Al-1%Si-0.5%Cu金属化焊盘。对焊点在不同温度下进行老化，通过SEM、EDX和Micro-XRD观察和分析IMC生长情况。结果表明：Cu/Al IMC的生长取决于老化温度和时间，在老化温度一定时，IMC厚度随与老化时间的关系符合抛物线法则，IMC生长对于老化温度比老化时间更加敏感；Cu/Al IMC生长的激活能为85Kcal/mol；老化后Cu/Al IMC为层状分布，主要的IMC为CuAl2和Cu9Al4。
Copper ball bonding is an alternative interconnection technology that serves as a viable and cost-saving alternative to gold wire bonding which is commonly applied in microelectronic packaging. In this paper, 50μm copper wire were bonded to the Al+1%Si+0.5%Cu pad successfully by thermosonic wire bonding. Scanning Electron Microscopy, Energy Dispersive X-ray Spectrometer and Micro X-Ray Diffractomer were adopted to investigate the intermetallic compounds (IMC) at the interface of wire and pad. The results show that Cu/Al IMC growth followed the parabolic law as a function of aging times at certain aging temperatures, Cu/Al IMC growth was more sensitive to the aging temperature than the aging time, the activation energy of Cu/Al IMC growth was 85Kcal/mol and the major forming IMC were CuAl2 and Cu9Al4.
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