采用脉冲激光烧蚀技术(PLA)在n型Si(100)单晶衬底上制备Tb-Si纳米颗粒.原子力显微镜(AFM)观察样品的表面形貌,发现样品表面是均匀分布的纳米颗粒,颗粒尺寸在10～20 nm之间,分布密度大约为6×1010/cm2.光电子能谱(XPS)及高分辨透射电镜(HRTEM)分析表明,纳米尺度的单晶硅化物颗粒的主要成分为Tb-Si及少量Tb-Si-O结构.室温下以荧光为激发光对样品的光致发光(photoluminescence)性能进行测试,结果表明样品在可见光区具有较强的发光现象,主要有4个发光峰,分别位于485,545,585和620 nm附近,这些发光峰主要由Tb3+中电子在不同能级之间的跃迁造成.
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