采用化学气相沉积法,通过改变催化剂和衬底,以Ga2 O3和GaN的混合粉末为镓源制备出了不同生长方向的GaN纳米线,制备的平躺于衬底的GaN纳米线的直径约为60 nm,长度为10 μm到30 μm之间.垂直于衬底的GaN纳米线阵列的直径约为300 nm,长度约为5μm.使用扫描电子显微镜(SEM)、X射线衍射(XRD)、光致发光谱(PL)和透射电子显微镜(TEM)对样品进行了分析表征,结果表明所得样品为六方纤锌矿结构的GaN单晶纳米线.通过改变催化剂和衬底等生长条件,研究了衬底和催化剂对纳米线生长方向的影响,为以后的大量制备以及纳米器件的制作提供了依据.
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