采用磁控溅射工艺在p-Si衬底上制备了Bi4-xNdxTi3O12铁电薄膜,研究了Nd掺杂对Bi4-xNdxTi3O12薄膜微观结构、介电和铁电性能的影响.结果表明,Nd掺杂并未改变薄膜的晶格对称性,仍然保持Bi层状钙钛矿结构,但能在一定程度上抑制晶粒的生长,使薄膜的晶粒更加细小、均匀,同时能明显改善薄膜的介电、铁电性能.Nd掺杂量x=0.30 ～0.40时,Bi4-xNdxTi3O12薄膜的综合性能较好,其介电常数εr＞250,介电损耗tanδ ＜0.1,剩余极化Pr=20.6 μC/cm2,Ec＜ 150 kV/cm.Ag/Bi4-xNdxTi3O12/p-Si异质结顺时针回滞的C-V曲线表明该异质结可实现极化存储,其记忆窗口达1.6V.但掺杂量不宜过多,当Nd掺杂量达到0.45以后,薄膜的介电、铁电性能反而有所下降.
参考文献
| [1] | 刘卓佳,刘保亭,彭增伟,代秀红,闫会芳,付跃举,赵庆勋.Pb过量对以Ti-Al为阻挡层的硅基铁电电容器极化翻转性能的影响[J].人工晶体学报,2011(06):1552-1556. |
| [2] | 冯湘,王华.La、Nb掺杂对Bi4Ti3O12薄膜介电性能和C-V特性的影响[J].人工晶体学报,2010(04):1014-1018. |
| [3] | C.R Cheng;M.H. Tang;Z. Ye .Structure evolution and ferroelectric properties of Bi_(3.4)Yb_(0.6)Ti_3O_(12) thin films crystallized under a moderate temperature[J].Materials Letters,2007(17):3563-3566. |
| [4] | H. Wang .Growth and polarization feature studies on rapid thermally processed preferentially c-axis-oriented Bi_4Ti_3O_(12) thin films on Si by sol-gel[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2004(1):64-68. |
| [5] | H. Wang;M. F. Ren .Characteristics of Ag/Bi3.25La0.75Ti3O12/p-Si heterostructure prepared by sol-gel processing[J].Journal of Sol-Gel Science and Technology,2007(3):247-250. |
| [6] | S.K. Singh;H. Ishiwara .Ferroelectric properties enhancement in niobium-substituted Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared by chemical solution route[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):90-95. |
| [7] | Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi_(4-x)Nd_(x)Ti_(3)O_(12) films[J].Applied physics letters,2003(12):2414-2416. |
| [8] | 王华,于军,王耘波,倪尔瑚.退火温度对Si基Bi4Ti3O12铁电薄膜微观结构影响研究[J].材料工程,2002(11):29-31,47. |
| [9] | Yuji Noguchi;Masaru Miyayama .Large remanent polarization of vanadium-doped Bi_(4)Ti_(3)O_(12)[J].Applied physics letters,2001(13):1903-1905. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%