为研制具有超大位移量的 Ｒ Ａ Ｉ Ｎ Ｂ Ｏ Ｗ 新型压电微位移驱动器， 对制备该器件所用铌锌酸铅锆钛酸铅（ Ｐ Ｚ Ｎ Ｐ Ｚ Ｔ） 压电陶瓷材料的还原行为进行了初步研究， 观察到还原样品断口上呈现出清晰的多层层次结构采用 Ｓ Ｅ Ｍ、 Ｘ Ｒ Ｄ 和电导率测量等研究方法， 研究了还原样品各层次的断口形貌、物相组成和导电类型， 对 Ｐ Ｚ Ｎ Ｐ Ｚ Ｔ 压电陶瓷材料在高温下被石墨还原的过程和机理作了初步解释研究表明还原反应是按照先晶界后晶粒的顺序进行， 各层的导电类型随还原程度由浅到深呈现出绝缘体型半导体型金属型的变化规律， 对于轻度还原层， 仍保持着初始的固溶体晶相结构， 相应地对深度还原层， 初始晶相结构已被破坏， 由分解的复相所构成.
The reduction behavior of PZN-PZT piezoelectric ceramics was preliminary studied for developing of the so called RAINBOW device
with ultrahigh induced displacement based on this material. Multilayer microstructure was observed in the cross section of reduced samples.
Fracture morphology, phase constitution and electric conductive type of every layer were studied with the help of SEM, XRD and electric
conductivity measuring methods. An explanation of the reduction process and mechanism of PZN-PZT ceramic reduced by graphite under high temperature
was proposed. It was believed that the reduction first happens at grain bourndary, then at the inner part of grains. With the increasing of
reduction extent, the variation of electric conductive types of different layers follows the sequence of insulator,semiconductor and metal. XRD
results showed that the original crystal stucture of PZN-PZT solid solution retains in the layers with lower level reduction, while it is completely
destroyed in highly reduced layers.
参考文献
| [1] | Haertling G H. American Ceramic Society Bulletin, 1994, 73: 93--96 2 魏晓勇, 陈大任, 李国荣. 第三届全国功能陶瓷会议, 重庆, 1998 3 Elissalde C, Cross L E, Randall C A. J. Am. Ceram. Soc., 1996, 79 (8): 2041--2048 4 Haertling G H. 4th International SAMPE Electronics Conference, 1990. 699--711 |
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