采用射频磁控溅射方法在Al2O3陶瓷基底上淀积厚度为500 nm的Cu膜,并将其于真空热处理炉中采用30℃/min和5℃/min两个升温速率升温至400℃退火处理2h,研究了退火升温速度对铜膜表面形貌、电阻率及附着力的影响.结果表明:退火热处理使Cu薄膜表面粗糙度增加,铜膜电阻率降低,膜-基结合力增强.且30℃/min快速升温较5℃/min缓慢升温退火热处理,Cu薄膜表面粗糙度低,Cu薄膜表面电阻率低,膜-基结合力差.利用自由电子气理论和扩散理论对退火热处理过程引起的性能变化进行了分析解释.
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