为了解决硅衬底与GaN之间的晶格失配和热失配问题,实验尝试采用常压化学气相沉积法(APCVD),分别以金属镓(Ga)和氨气(NH3)为镓源和氮源,在加入A1、Au/Al两种金属缓冲层和不加缓冲层的硅衬底上生长氮化镓(GaN)薄膜.采用高分辨X射线衍射仪(HRXRD)、X-ray能谱仪(EDS)、场发射扫描电子显微镜(FESEM)和光致发光能谱(PL)对样品进行了结构、成分、形貌和发光性能分析,结果表明,生成物均为六方纤锌矿结构的GaN多晶薄膜,但其形貌和发光性能各异.在加入金属缓冲层后,GaN薄膜的致密度和结晶性能均提高,而且其生长取向随之发生了显著变化,光强度也有所增强.最后,对在不同缓冲层上GaN薄膜的生长机理进行了初步探讨.
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