应用固体与分子经验电子理论(EET)分析了半导体化合物硫化镉(CdS)的价电子结构,并计算了化合物的键能、熔点,计算值与实验值一致.CdS的闪锌矿和纤锌矿两种结构的价电子计算结果表明,两种结构的价电子分布非常相似,其键能主要分布在最近的4条Cd-S键上.闪锌矿和纤锌矿结构的CdS中的Cd原子和S原子都应处于第四杂阶.键能分布计算结果表明,常温下,六角结构的CdS要比立方结构的CdS更加稳定,但两种结构的结合能差值相对于键能非常小,晶体结构的各向异性也在减弱,但总体来说其结构稳定性差别不大,很容易受到环境影响而发生相互转化.对熔点的计算结果表明,CdS的固相稳定性与其共价电子结构密切相关,对熔点起主要作用的是最强键的共价电子对数,其对纤锌矿和闪锌矿两种结构熔点的影响率分别为93.4%和99.2%.
参考文献
[1] | 熊绍珍;朱美芳.太阳能电池基础与应用[M].北京:科学出版社,2009:367. |
[2] | 欧阳珉路 .纳米薄膜的制备及CdS复合薄膜在太阳能电池中的应用[D].武汉:华中师范大学,2009. |
[3] | 杨定宇,郑家贵,朱兴华,魏昭荣,夏庚培,冯良桓.CdS多晶薄膜的制备及性质研究[J].功能材料,2009(09):1499-1501,1505. |
[4] | 许荣辉,汪勇先,贾广强,徐万帮,尹端沚.闪锌矿结构CdS纳米晶的制备[J].高等学校化学学报,2007(02):217-219. |
[5] | Titipun THONGTEM,Chalermchai PILAPONG,Somchai THONGTEM.Silica gel-assisted solvothermal production of CdS, CuxS(x=1, 2) and ZnS with different morphologies[J].中国有色金属学报(英文版),2009(z1):105-109. |
[6] | Khan Z R;Zulfequar M;Khan M S .Optical and structural properties of thermally evaporated cadmium sulphide thin films on silicon (1 0 0) wafers[J].Materials Science and Engineering B,2010,174(01):145. |
[7] | Thanikaikurasan S;Mahalivngam T;Lee S et al.Electrosynthesis and studies on cadmium-iron-sulphide thin films[J].Materials Science and Engineering B,2010,174(01):231. |
[8] | Bagdare, PB;Patil, SB;Singh, AK .Phase evolution and PEC performance of Zn_xCd_(1-x)S nanocrystalline thin films deposited by CBD[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2010(1):120-124. |
[9] | 杨一军,阚彩侠,谢宇,杨保华,张立德.CdS薄膜的电输运和光学性质[J].厦门大学学报(自然科学版),2003(01):39-43. |
[10] | 倪利红,刘涌,宋晨路,徐刚,韩高荣.第一性原理方法研究CdS能带结构[J].稀有金属材料与工程,2008(z2):623-625. |
[11] | Chen, H.;Zhu, Y.;Wu, B. .High pressure polymorph of CdS predicted by first principles[J].Physica, B. Condensed Matter,2011(21):4052-4055. |
[12] | 余瑞璜 .固体与分子经验电子理论[D].长春:吉林大学,1985. |
[13] | Pauling L .The nature of the chemical bond[D].New York:Comell University,1966. |
[14] | 吴文霞,洪兴,郭朝晖,郭永权.Co6.3Nb6.7晶体的价电子结构分析和熔点计算[J].钢铁研究学报,2009(05):42-45. |
[15] | 余瑞璜.CrO3,δ-CrO2,Cr2O3,α-Al2O3的熔点、沸点和在水及其它溶液中溶解度的电子理论[J].结构化学,1984(03):193. |
[16] | LIN Cheng,LIU ZhiLin.Statistical values of valence electron struct-ure parameters applied to research on phase transition temperature and eutectoid reaction of titanium alloy[J].中国科学E辑(英文版),2008(11):1867-1880. |
[17] | 侯延辉,李光强,刘志义,樊希安.从电子结构和成键特性分析高Cu/Mg比Al-Cu-Mg-Ag合金强化机制[J].稀有金属材料与工程,2011(03):407-412. |
[18] | 弭光宝,李培杰,何良菊,Πопедь Π С.镁合金熔体结构信息的价电子理论研究[J].稀有金属材料与工程,2010(11):1881-1887. |
[19] | 杨新建,李世春,李红.PbTiO3价电子结构和铁电性的经验电子理论计算[J].原子与分子物理学报,2007(z1):140-144. |
[20] | 庞来学,孙康宁,孙家涛,李明.Fe3Al金属间化合物的价电子结构与其力学性能的关系[J].材料热处理学报,2004(02):64-67. |
[21] | 吴文霞,郭永权,李安华,李卫.Nd2Fe14B的价电子结构分析和磁性计算[J].物理学报,2008(04):2486-2492. |
[22] | Benkabou F.;Certier M.;Aourag H. .Atomistic study of zinc-blends CdS, CdSe, ZnS, and ZnSe from molecular dynamics[J].Materials Chemistry and Physics,2000(1):10-16. |
[23] | Sowa H .On the mechanism of the pressure-induced wur-tzite-to NaCl-type phase transition in CdS:An X-ray diffraction study[J].Solid State Sciences,2005,7(01):73. |
[24] | 张瑞林.固体与分子经验电子理论[M].长春:吉林科学技术出版社,1990:272. |
[25] | Cotton F A;Wilkinson G;Murillo C A.Advanced inorganic chemistry[M].Anglais:Advanced Inorganic Chem,1999 |
[26] | Deligoz E;Colakoglu K;Ciftci Y .Elastic, electronic, and lattice dynamical properties of CdS, CdSe, and CdTe[J].Physica, B. Condensed Matter,2006(1):124-130. |
[27] | Cohen M L .Calculation of bulk moduli of diamond and zincblende solids[J].Physical Review B:Condensed Matter,1985,32(12):7988. |
[28] | Bechstedt F;Harrison W A .Lattice relaxation around substitutional defects in semiconductors[J].Physical Review B:Condensed Matter,1989,39(08):5041. |
[29] | Madelung O;SchulzM;Weiss H.Numerical data and functional relationships in science and technology[M].Berlin:17 Springer,1982 |
[30] | A.S. Verma;R.K. Singh;S.K. Rathi .Thermal property of binary tetrahedral semiconductors[J].Physica, B. Condensed Matter,2009(21):4051-4053. |
[31] | Liu, Q.Q.;Shi, J.H.;Li, Z.Q.;Zhang, D.W.;Li, X.D.;Sun, Z.Z.;Zhang, L.Y.;Huang, S.M. .Morphological and stoichiometric study of chemical bath deposited CdS films by varying ammonia concentration[J].Physica, B. Condensed Matter,2010(20):4360-4365. |
[32] | Su B;Choy K L .Electrostatic assisted aerosol jet deposition of CdS,CdSe and InS thin films[J].Thin Solid Films,2000,361-362(21):102. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%