以单丁基三氯化锡(MBTC)和SbCl3为反应原料,采用常压化学气相沉积法(APCVD法)在不同的基板温度下制备Sb掺杂SnO2薄膜,用XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性质,详细研究了基板温度对薄膜结构和光电性能的影响.实验表明550℃以上制备的样品为多晶薄膜,并保持四方相金红石型结构;在650℃下沉积的薄膜具有最低的方块电阻值,为72Ω/□;在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降.
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