采用低压化学气相沉积(LPCVD)技术在大面积的玻璃衬底上制备了B掺杂ZnO(BZO)透明导电薄膜,研究了不同B2H6掺杂量对BZO薄膜微观形貌、导电能力及其均匀性、透光率等性能的影响.结果表明,所制备的BZO薄膜表面具有自生长的绒面结构;B2H6掺杂量由30 sccm增加到60 sccm,BZO薄膜的方阻由28.6Ω/□减小到14.1 Ω/□,导电能力显著增强,同时方阻均匀性也明显提升;BZO薄膜在长波区的透光率随B2H6掺杂量的增加而明显降低,综合透光率结果,最佳B2H6掺杂量控制在60～ 90 sccm之间.
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