采用射频磁控溅射技术在石英衬底上制备了掺杂浓度为0.5%(原子分数)的ZnO∶Sn(TZO)薄膜,研究了不同衬底温度下薄膜的结构、形貌、电学和光学的性能.研究发现,TZO薄膜沿着C轴择优生长,在400℃时结晶度最好,最低电阻率为2.619×10-2Ω·cm,在可见光范围内具有较好的透光率.
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