通过热蒸镀Cu膜并在空气中退火制备Cu_2O薄膜,利用X射线衍射(XRD)、能量分散X射线谱(EDX)和原子力显微镜(AFM)研究了已沉积和不同温度退火薄膜的晶体结构、成份和表面形貌.结果表明,Cu膜在200℃退火30分钟可以得到具有单一成份的Cu_2O薄膜.四探针测量得到所制备魄Cu_2O薄膜电阻率为0.22Ωcm.用紫外可见光分光光度计(Uv-vis)研究了Cu_2O薄膜的光学特性,得出其光学带隙为2.4eV.
Cu_2O films were prepared by thermal evaporation of metallic Cu and annealing Cu films in air.The structures,elements and topographies of the as-deposited film and the films annealed at different temperatures were studied by X-ray diffractometry (XRD),energy dispersive X-ray spectroscopy (EDX),and atomic force microscopy (AFM).The results show that Cu_2O film has been obtained by annealing the as-deposited Cu film at 200℃ for 30 minutes.Resistance of the Cu_2O film is 0.22Ωcm measured by four-point probe.Optical property of the Cu_2O film was studied using an ultraviolet-visible spectrophotometer(UV-vis)and its optical band gap is 2.4eV.
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