电子湮没寿命谱(PALS)和符合多普勒展宽(CDB)技术研究了不同含量的Nb元素对Ti–49Al合金的掺杂效应．研究结果表明：低含量掺杂时，Nb原子主要偏聚在合金晶界缺陷处，提高了晶界位置的自由电子密度，有利于改善合金的室温韧性；而较高含量的Nb掺杂时，由于形成了新的晶体结构，合金基体及晶界处的自由电子密度减小，导致合金的脆性增加．
Positron annihilation lifetime and coincidence Doppler broadening measurements have been performed in Ti51Al49 alloy with different amounts of Nb doped. The experimental results indicate that when a low mount of Nb atoms is added into Ti51Al49 alloy, the Nb atoms mainly aggregate at grain boundaries, and then the free electron density increases, which reduces the brittleness of TiAl alloys. In contrast, the density of free electron in grain boundaries and in bulk are both decrease in high Nb doped alloy, due to the formation of the new order structure, which increases the brittleness of TiAl alloys.
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