Se量是影响CIGS薄膜生长的重要因素之一.本实验利用三步共蒸法在不同Se量常温下沉积CIGS薄膜,而后对衬底分三步在不同温度下真空退火,采用扫描电子显微镜(SEM)和能量散射谱(EDS)观察和分析了薄膜的表面形貌和元素成分,采用X射线衍射仪(XRD)表征了薄膜的组织结构,采用紫外可见分光光度计(UV)研究了薄膜的光学性质,结果表明真空退火下Se量应严格控制在Culn0.7 Ga0.3 Se2化学计量比范围内,这样有利于制备出较高吸收率的CIGS薄膜.
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