为使磁控溅射方法制备出性能良好的Cu/CuNi薄膜热电偶，在确定Cu、CuNi薄膜临界尺寸的基础上，以基底温度、靶基距、溅射功率、工作气压为因素进行正交试验，研究制备工艺对薄膜电阻率的影响。实验结果表明：基底温度是影响薄膜电阻率大小的最主要因素，在一定范围内，温度越高，电阻率越小；确定了使Cu、CuNi薄膜电阻率最小的工艺条件。以薄膜电导理论为基础，结合薄膜微观结构和表面形貌，解释了薄膜电阻率随基底温度变化的原因。
To prepare a good performance Cu/CuNi thin-film thermocouple by magnetron sputtering, an orthogonal experiment with four factors sample temperature, substrate-to-target distance, sputtering power and air pressure was designed to study the effects of preparation processes on the thin film resistivity after the critical dimension of thin film was determined. The results show that the sample temperature is the key factor to thin-film resistivity, which decreases with the sample temperature increasing in a certain range, and the optimal preparation process for the lowest resistivity has been obtained. Based on thin-film theory of conductance and combined with film microstructure and surface morphology, the reason of temperature dependence of electrical resistivity was explained .
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