Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)] ×20Multilayer Film

材料科学技术（英文）, 2005, 21(4): 593-598.

^1, , ^2, , ^3, , ^4,

1.College of Material and Energy,Guangdong University of Technology,Guangzhou 510643,China

2.College of Material and Energy,Guangdong University of Technology,Guangzhou 510643,China

3.College of Material and Energy,Guangdong University of Technology,Guangzhou 510643,China

4.College of Material and Energy,Guangdong University of Technology,Guangzhou 510643,China

基金项目: the National Natural Science Foundation of China(59771026)

Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)] ×20Multilayer Film

Keywords： Co ion implantation

The composition, phase structure and microstructure of the discontinuous multilayer film [NiFeCo(10 nm)/Ag(10 nm)]×20 were investigated after Co ion implantation and annealing at 280, 320, 360 and 400℃, respectively.GMR (giant magnetoresistance) ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GM R ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo(10 nm)/Ag(10 nm)] ×20with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.

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Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)] ×20Multilayer Film

参考文献