稀土学报(英文版), 2002, 20(5): 471-474.
1.Department of Chemistry, Shanxi Normal University, Linfen 041004, China
{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"分别采用共溅射和多层膜溅射方法制备了FePt:Ag颗粒膜.样品的磁性能和微观特性分别用振动样品磁强计(VSM)、磁力显微镜(MFM)和透射电镜(TEM)进行了表征.研究结果表明:多层膜溅射制备的FePt:Ag颗粒膜能在较低的退火温度下发生有序化相变;而共溅射制备的FePt:Ag颗粒膜经过相同的退火条件后,具有更高的矫顽力,及更细、分布更均匀的晶粒和磁畴结构.","authors":[{"authorName":"程晓敏","id":"3d53501d-fd6e-493d-843d-830e32b1eebb","originalAuthorName":"程晓敏"},{"authorName":"杨晓非","id":"371b1a6e-6d13-470b-a95c-3efa5130d979","originalAuthorName":"杨晓非"},{"authorName":"董凯峰","id":"6c472756-d16a-408c-ac6c-9a464b16c805","originalAuthorName":"董凯峰"},{"authorName":"李佐宜","id":"767b4869-a1c2-4c38-9121-ecff2d5775ac","originalAuthorName":"李佐宜"}],"doi":"","fpage":"544","id":"70164b35-2710-4e9c-b8ce-4528dde14808","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"83889bb0-2fd3-4d2c-bbce-72c74ab5fe1e","keyword":"FePt","originalKeyword":"FePt"},{"id":"ca351445-608e-4f70-a671-da275b3ada65","keyword":"Ag 颗粒膜","originalKeyword":"Ag 颗粒膜"},{"id":"a26e66d8-b08e-491e-92da-a383be21d66f","keyword":"溅射方法","originalKeyword":"溅射方法"},{"id":"f68bbeae-c59a-4a9a-9091-2ca274057b06","keyword":"磁性能","originalKeyword":"磁性能"},{"id":"76b4db56-e8d1-48e9-a2e4-8470b9986543","keyword":"微观结构","originalKeyword":"微观结构"}],"language":"zh","publisherId":"gncl200804005","title":"溅射方法对FePt:Ag颗粒膜磁性能及微观结构的影响","volume":"39","year":"2008"},{"abstractinfo":"采用射频磁控溅射和离子束溅射联合设备在玻璃衬底上制备出了具有良好附着性、低电阻率和高透过率的GZO/Ag/GZO(ZnO掺杂Ga_2O_3简称GZO)多层薄膜.X射线衍射谱表明GZO/Ag/GZO多层薄膜是多晶膜,GZO层具有ZnO的六角纤锌矿结构,最佳取向为(002)方向;Ag层是立方结构,具有(111)取向.在GZO层厚度一定的情况下,研究了Ag层厚度的变化对多层膜结构以及光电特性的影响.研究发现,当Ag层厚度为10nm时,3层膜的电阻率为9×10~(-5)Ω·cm,在可见光范围内平均透过率达到89.7%,薄膜对应的品质因子数值为3.4×10~(-2)Ω~(-1).","authors":[{"authorName":"杨田林","id":"c75a1bb2-84ab-416b-a01f-a1a094e8487b","originalAuthorName":"杨田林"},{"authorName":"张之圣","id":"1e982d85-de94-4eeb-a64f-b446b5976be3","originalAuthorName":"张之圣"},{"authorName":"宋淑梅","id":"765c4fd0-3b39-4e0f-ae69-c644170e46c1","originalAuthorName":"宋淑梅"},{"authorName":"辛艳青","id":"38d225a5-8f7e-436e-8e18-d5f2349d2833","originalAuthorName":"辛艳青"},{"authorName":"姜丽莉","id":"876cd656-c1f4-4d67-9932-ef490e8d7875","originalAuthorName":"姜丽莉"},{"authorName":"李延辉","id":"ce6ef547-6a65-46dd-8927-9e3ea92b95f8","originalAuthorName":"李延辉"},{"authorName":"韩圣浩","id":"b53e4f51-f681-4de1-bd6b-a446fdd3df66","originalAuthorName":"韩圣浩"}],"doi":"","fpage":"1767","id":"aacf2f5f-0d42-47a5-a4ed-a64abcfc66b6","issue":"11","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b82b72e2-a6ae-4747-bd93-7e77d2df3e8a","keyword":"GZO/Ag/GZO","originalKeyword":"GZO/Ag/GZO"},{"id":"8abb9389-0db0-47ed-aaea-81629b38150b","keyword":"多层膜","originalKeyword":"多层膜"},{"id":"9d98f369-c541-47ec-9f8a-0a574b5ce77b","keyword":"溅射方法","originalKeyword":"溅射方法"},{"id":"a1694596-c6a7-42d1-abd4-d1f4538e1064","keyword":"透明导电膜","originalKeyword":"透明导电膜"}],"language":"zh","publisherId":"gncl200911001","title":"GZO/Ag/GZO多层薄膜制备、结构与光电特性的研究","volume":"40","year":"2009"},{"abstractinfo":"采用反应磁控溅射方法在高速钢基体上制备了CNx薄膜,通过改变氮气和氩气的流量比来调整CNx薄膜中的氮含量,并采用XRD、HR-TEM、SEM、FTIR和显微硬度计等对薄膜的结构及其在300,400,500,600℃下的高温抗氧化性能进行了表征.结果表明:CNx薄膜在400℃以下具有较好的抗氧化性能,当氧化温度达到500℃后薄膜会发生严重氧化和分解;CNx薄膜中氮含量的增加有利于改善薄膜的高温抗氧化性能.","authors":[{"authorName":"陈向阳","id":"6e7e30f7-aad1-4f27-a810-336835b70266","originalAuthorName":"陈向阳"},{"authorName":"张瑾","id":"49f89b10-a83d-40e0-9228-c52c46e04e05","originalAuthorName":"张瑾"},{"authorName":"胡海霞","id":"e62c55c9-c3bb-49bf-89e8-8de56590bb26","originalAuthorName":"胡海霞"},{"authorName":"周哲波","id":"4ce18506-f8ad-410b-8623-d52bf2887d46","originalAuthorName":"周哲波"}],"doi":"","fpage":"71","id":"9ee2360c-a19b-4266-b133-6da68da5490c","issue":"5","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"c3a49b40-7989-48fa-956b-9ec978e23f8b","keyword":"CNx薄膜","originalKeyword":"CNx薄膜"},{"id":"2d0d9b5b-d76f-47ea-9347-c735030bac70","keyword":"抗氧化性能","originalKeyword":"抗氧化性能"},{"id":"35203995-c1dd-46db-863b-46e1287717bc","keyword":"氮含量","originalKeyword":"氮含量"},{"id":"7f2df6cb-d56a-422c-b0d9-08a0eda776ac","keyword":"反应磁控溅射","originalKeyword":"反应磁控溅射"}],"language":"zh","publisherId":"jxgccl201405015","title":"反应磁控溅射方法制备CNx薄膜的高温抗氧化性能","volume":"38","year":"2014"},{"abstractinfo":"分别将W18Cr4V高速钢和YG8硬质合金作为衬底材料,用直流磁控溅射和射频磁控溅射法制备了CNx薄膜,用划痕法测定了薄膜和衬底材料之间的膜基结合力.结果表明:YG8硬质合金作为衬底材料时薄膜的膜基结合力较高;对YG8硬质合金衬底材料进行适当的腐蚀处理或溅射一层TiN中间层,薄膜的膜基结合力明显提高;对于两种衬底材料,射频磁控溅射法制备的薄膜膜基结合力明显高于直流磁控溅射法制备的薄膜.","authors":[{"authorName":"刘军","id":"94c74403-1c09-410f-b326-9b548271aa02","originalAuthorName":"刘军"},{"authorName":"陈志刚","id":"9f4375c3-53ef-4383-9f3e-7c78c6a351cc","originalAuthorName":"陈志刚"},{"authorName":"陈春","id":"cb242925-e8b0-430f-b3b4-67424d10f8c9","originalAuthorName":"陈春"},{"authorName":"毕凯","id":"0c3b34a4-8ee3-424a-bc2e-1230bb035676","originalAuthorName":"毕凯"}],"doi":"10.3969/j.issn.1000-3738.2006.12.003","fpage":"7","id":"11fdcaf7-6c13-4c4c-8692-8aafb5ffcebe","issue":"12","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"2bb49c44-04ea-47c0-b779-e9dc739e076b","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"8c197baf-aa8f-4c4a-9b35-0b6a9e0cbbc1","keyword":"衬底","originalKeyword":"衬底"},{"id":"148d5e84-eff3-4cb9-925f-08f85a24bba2","keyword":"CNx薄膜","originalKeyword":"CNx薄膜"},{"id":"0c738f2a-8964-4863-9119-3bcabee6342c","keyword":"结合力","originalKeyword":"结合力"}],"language":"zh","publisherId":"jxgccl200612003","title":"衬底材料和溅射方法对CNx薄膜膜基结合力的影响","volume":"30","year":"2006"},{"abstractinfo":"以Si为衬底,SiO2+Ge为复合靶,用超晶格方法(SiO2+Ge层和SiO2 + GeO2层交替生长)和磁控溅射技术制备镶嵌于Si/Ge氧化膜中的多层Ge纳米晶.X射线衍射(XRD)结果表明:退火样品中有Ge纳米晶生成.Ge纳米晶的声子限域效应引起Raman散射谱的Ge-Ge振动峰向低频移动.X射线光电子能谱(XPS)分析表明Ge主要以Ge0和Ge4+形式分别存在于所制备的超晶格中的SiO2+Ge层和SiO2+GeO2层中.透射电子显微镜(TEM)研究表明,Ge纳米晶被限制在SiO2+Ge层中且结晶性好.实验结果说明,相比于通常的单层介质膜方法,用该超晶格方法极大地提高了Ge纳米晶的密度,尺寸和空间分布的均匀性.","authors":[{"authorName":"晏春愉","id":"36e44cf8-8475-4fed-b33c-89305653953c","originalAuthorName":"晏春愉"},{"authorName":"高斐","id":"3fcb6849-8e14-4a9a-8198-d49c9f6d754e","originalAuthorName":"高斐"},{"authorName":"张佳雯","id":"5ec53258-3e42-430a-ae07-9e3a6de298dc","originalAuthorName":"张佳雯"},{"authorName":"方晓玲","id":"75f39220-8604-4b82-a152-704289eff0bb","originalAuthorName":"方晓玲"},{"authorName":"刘伟","id":"9f020db2-569b-47d2-92ae-a0a0f48bb491","originalAuthorName":"刘伟"},{"authorName":"孙杰","id":"401595c2-832d-475d-98ef-74fb0cbdb6c1","originalAuthorName":"孙杰"},{"authorName":"权乃承","id":"c575b406-068d-4a06-a198-fb2cadc4010c","originalAuthorName":"权乃承"}],"doi":"","fpage":"705","id":"362223b4-5627-40d3-a944-a169f996a239","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"288fea60-b6c7-4c90-8cae-acf6f7eb693e","keyword":"多层Ge纳米晶","originalKeyword":"多层Ge纳米晶"},{"id":"ddd5ed29-d521-4e5c-a8e8-64356a2ebd2f","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"8b182c8e-ea68-47f1-9efd-dd3df05c7770","keyword":"退火","originalKeyword":"退火"},{"id":"5da0c000-8069-4ed7-95be-c34790ac3258","keyword":"超晶格方法","originalKeyword":"超晶格方法"},{"id":"b58535c4-8f11-4e4d-89c0-5ee3c3ed1594","keyword":"均匀性","originalKeyword":"均匀性"}],"language":"zh","publisherId":"rgjtxb98200903035","title":"用磁控溅射和退火方法制备多层锗纳米晶","volume":"38","year":"2009"},{"abstractinfo":"采用磁控溅射方法制备掺氮TiO薄膜.将TiOx作为靶材,通以N2/Ar混合气体来精确控制N的掺杂量.为改善掺氮TiOx薄膜的性能,首先将试样放于退火炉中退火,退火温度范围为300～600℃;再将试样放于黑暗处一段时间;最后用可见光(ⅥS)照射.采用扫描电子显微镜(SEM)观察薄膜的表面形貌,结果表明,颗粒尺寸随退火温度升高而增大.采用X射线光电子能谱(XPS)研究薄膜的化学成分,结果表明,薄膜中生成了N-Ti-O (β-N)和羟基,这可能是因为N掺杂入TiOx晶格引起的;且羟基含量随退火温度升高而增加,使得基片有更好的亲水性.采用X射线衍射(XRD)研究薄膜的晶体结构,结果表明,退火后非晶薄膜转变为晶态.采用接触角仪测试薄膜的亲水性,结果表明,水接触角随退火温度升高而减小,这可能是由于颗粒尺寸和羟基含量的改变造成的.亲水性也受避光储存时间的影响,实验结果表明,随着储存时间的增加,水接触角增加.可见光照射实验表明,可见光照射后薄膜的亲水性增加.","authors":[{"authorName":"程春玉","id":"b0dacb87-ef4b-48b6-8380-0edbd56fa318","originalAuthorName":"程春玉"},{"authorName":"蔺增","id":"343ebf3d-718b-4f5b-985c-9d8a7a7ad362","originalAuthorName":"蔺增"},{"authorName":"王妨","id":"3bea78d6-01a5-453c-949e-218df66fbaa2","originalAuthorName":"王妨"},{"authorName":"李慕勤","id":"b9bfab36-4b72-4052-b67f-0204a65690fe","originalAuthorName":"李慕勤"}],"doi":"","fpage":"2232","id":"ab9992e3-73da-4992-9a72-c1400987ea50","issue":"9","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"e73fe583-25ef-4a54-ac25-6646b999547d","keyword":"掺氮TiO2薄膜","originalKeyword":"掺氮TiO2薄膜"},{"id":"7d0ec93a-561e-4b03-ab85-f3c366d96d64","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"c758e6d1-b952-453e-b32a-b0812134f7fb","keyword":"退火","originalKeyword":"退火"},{"id":"859a96db-5794-4641-86f4-9be5b0e0289f","keyword":"亲水性","originalKeyword":"亲水性"}],"language":"zh","publisherId":"xyjsclygc201609006","title":"射频磁控溅射方法制备掺氮TiOx薄膜及其结构和亲水性研究","volume":"45","year":"2016"},{"abstractinfo":"使用一种配套于磁控溅射设备的基片液氮冷却装置制备了小颗粒度纳米微晶NiOx电致变色薄膜. 当溅射参数完全相同时, 借助于对基片的冷却可有效控制并降低NiOx薄膜的晶粒尺度. 冷却基片所制备的NiOx薄膜的电致变色性能明显优于室温时制备的薄膜, 且该薄膜的O/Ni比率也明显高于室温时制备的NiOx薄膜的O/Ni比率.","authors":[{"authorName":"王怀义刁训刚王武育郝维昌王聪王天民","id":"363a47ca-c952-468f-a5b4-a9b61d188707","originalAuthorName":"王怀义刁训刚王武育郝维昌王聪王天民"}],"categoryName":"|","doi":"","fpage":"426","id":"e76452a0-e800-4140-9470-df1885c82e77","issue":"4","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"1ca83bd0-ecbe-43d6-b1af-85716335c234","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"bbc5eb78-21f3-4207-a89e-638bddde636f","keyword":"magnetron sputtering","originalKeyword":"magnetron sputtering"},{"id":"bc539103-e570-4092-9cc1-5c41b7575ea1","keyword":"nano-microcrystalline state","originalKeyword":"nano-microcrystalline state"},{"id":"a69a790b-f254-434a-8867-1f2aae2296ef","keyword":"electrochromism","originalKeyword":"electrochromism"},{"id":"ebe9e42b-b05d-4e4f-9e4a-f2c7d9ba1f37","keyword":"NiOx film","originalKeyword":"NiOx film"}],"language":"zh","publisherId":"1005-3093_2009_4_9","title":"基于磁控溅射制备纳米微晶NiOx薄膜的方法","volume":"23","year":"2009"},{"abstractinfo":"使用一种配套于磁控溅射设备的基片液氮冷却装置制备了小颗粒度纳米微晶NiOx电致变色薄膜.当溅射参数完全相同时,借助于对基片的冷却可有效控制并降低NiOx薄膜的晶粒尺度.冷却基片所制备的NiOx薄膜的电致变色性能明显优于室温时制备的薄膜,且该薄膜的O/Ni比率也明显高于室温时制备的NiOx薄膜的O/Ni比率.","authors":[{"authorName":"王怀义","id":"daee1f5f-7c25-436b-9d81-a7c1e41d46fe","originalAuthorName":"王怀义"},{"authorName":"刁训刚","id":"b0b27d24-eaee-40b3-914e-8657ccd1f6b7","originalAuthorName":"刁训刚"},{"authorName":"王武育","id":"bf4b7d01-01e7-4970-8628-4bec78821d1f","originalAuthorName":"王武育"},{"authorName":"郝维昌","id":"82a33c4f-b18d-4167-9243-c73ff52a3621","originalAuthorName":"郝维昌"},{"authorName":"王聪","id":"33d70a1c-5d6e-48d0-aca4-18c0de9005b5","originalAuthorName":"王聪"},{"authorName":"王天民","id":"fa53c719-6dd8-4e9c-8ea3-ab511bd94f7c","originalAuthorName":"王天民"}],"doi":"10.3321/j.issn:1005-3093.2009.04.017","fpage":"426","id":"245b8409-acbf-4213-856b-b39b90d88f39","issue":"4","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"3d0ed829-d1f8-4ec5-926e-9e7d6d7909b6","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"801cfed7-fa27-4182-99d7-f7623161e42b","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"6b969c75-4f0b-4378-a911-52edb107e691","keyword":"纳米微晶态","originalKeyword":"纳米微晶态"},{"id":"5497f17e-65d3-4cd9-a340-11234d391ad7","keyword":"电致变色","originalKeyword":"电致变色"},{"id":"02c31a22-a6d5-48f8-a817-66ec32516f61","keyword":"NiOx薄膜","originalKeyword":"NiOx薄膜"}],"language":"zh","publisherId":"clyjxb200904017","title":"基于磁控溅射制备纳米微晶NiOx薄膜的方法","volume":"23","year":"2009"},{"abstractinfo":"采用直流对靶磁控溅射低价态氧化钒(VO2-x)薄膜再附加热氧化处理的方式,进行具有金属-半导体相变特性氧化钒薄膜的制备.采用X射线光电子能谱(XPS)、X射线衍射(XRD)和原子力显微镜(AFM)对薄膜中钒的价态与组分、薄膜结晶结构和表面微观形貌进行分析,利用热敏感系统对薄膜的电阻温度特性进行测量.结果表明:新制备的低价态氧化钒薄膜以V2O3和VO为主,经过300℃低温热氧化处理后,薄膜中出现单斜金红石结构的VO2相,薄膜具有金属-半导体相变特性;薄膜表面颗粒之间存在间隙,利于氧的渗入:在300～320℃进行热处理时,薄膜中的V2O3和VO向单斜结构的VO2转变,VO2含量增加,随着薄膜内VO2含量的增加,薄膜的金属-半导体相变幅度增大,超过2个数量级,相变性能变好,但是此热处理温度区间对已获得的VO2的结构没有影响.同时利用直流对靶磁控溅射方法还可以在低氧化温度下获得具有优异金属-半导体相变特性的氧化钒薄膜,制备工艺与微机械电子系统(MEMS)工艺相兼容.","authors":[{"authorName":"梁继然","id":"3fbd88ad-f725-47c3-944b-a1bc47487eb8","originalAuthorName":"梁继然"},{"authorName":"胡明","id":"a0146b71-de3b-4ab9-89e2-862bd317f484","originalAuthorName":"胡明"},{"authorName":"刘志刚","id":"9f630641-322d-4b35-9c16-11a5cfd45389","originalAuthorName":"刘志刚"},{"authorName":"韩雷","id":"6b21297a-595f-4e53-86ad-73cdf49165b6","originalAuthorName":"韩雷"}],"doi":"","fpage":"1203","id":"f1f6953b-1c41-43a9-8642-7a9547513b9d","issue":"7","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"370602c8-c36d-424e-972c-06223eead9de","keyword":"相变氧化钒薄膜","originalKeyword":"相变氧化钒薄膜"},{"id":"6c59ed62-237e-468b-8a77-2706fd56a12f","keyword":"低温热氧化","originalKeyword":"低温热氧化"},{"id":"583756ba-528d-4098-8fcb-c5a663a123f8","keyword":"直流对靶磁控溅射","originalKeyword":"直流对靶磁控溅射"}],"language":"zh","publisherId":"xyjsclygc200907017","title":"用对靶磁控溅射附加低温热氧化处理方法制备相变氧化钒薄膜","volume":"38","year":"2009"},{"abstractinfo":"溅射靶材常用于半导体产业、记录媒体产业和先进显示器产业. 在不同产业中, 半导体集成电路制造业对溅射靶材的质量要求最高. 对用于集成电路制造的溅射靶材的材质类型、纯度要求、外形发展进行了阐述, 并讨论了溅射靶材微观组织对溅射薄膜性质的影响, 以及靶材中夹杂物、晶粒尺寸、晶粒取向的控制方法.","authors":[{"authorName":"尚再艳","id":"e1afd132-13b0-45ea-8f07-d259d3cd67dd","originalAuthorName":"尚再艳"},{"authorName":"江轩","id":"dd4eefac-2ef1-4f80-944b-fea803460373","originalAuthorName":"江轩"},{"authorName":"李勇军","id":"0e8f34eb-f740-459c-910c-d6e31b49915a","originalAuthorName":"李勇军"},{"authorName":"杨永刚","id":"d354b7ef-f862-483f-a296-028c7f7ecbad","originalAuthorName":"杨永刚"}],"doi":"10.3969/j.issn.0258-7076.2005.04.022","fpage":"475","id":"7636e988-0e0a-4ef3-8975-70960dc79fdc","issue":"4","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"0ed296a9-62cb-459b-996b-97fa0cf775fa","keyword":"集成电路","originalKeyword":"集成电路"},{"id":"66ae37d0-1f59-4196-bf02-3af046d5eab6","keyword":"溅射","originalKeyword":"溅射"},{"id":"35d719a7-0c30-449b-bad9-78eff5a90a6a","keyword":"靶材","originalKeyword":"靶材"},{"id":"e2832166-b385-4b85-bc0a-25c1ce4a31eb","keyword":"半导体","originalKeyword":"半导体"}],"language":"zh","publisherId":"xyjs200504022","title":"集成电路制造用溅射靶材","volume":"29","year":"2005"}],"totalpage":5637,"totalrecord":56361}