硅片加工表面层损伤检测技术的试验研究

人工晶体学报, 2011, 40(2): 359-364.

硅片加工表面层损伤检测技术的试验研究

张银霞 ^1, , 李大磊 ^2, , 郜伟 ^3, , 康仁科 ^4,

1.郑州大学机械工程学院,郑州,450001

2.郑州大学机械工程学院,郑州,450001

3.郑州大学机械工程学院,郑州,450001

4.大连理工大学精密与特种加工教育部重点实验室,大连,116024

基金项目: 河南省教育厅自然科学研究资助项目(2011A460012) 国家自然科学基金(51075125)

关键词：硅片 , 加工损伤 , 检测技术

Experimental Investigation on the Detection Technique for Surface Layer Damage of Machined Silicon Wafers

单晶硅片超精密加工表面层损伤较小,检测评价比较困难.为了确定合适的检测技术,对多种硬脆材料表面层质量检测技术进行了系统的试验研究.结果表明,硅片加工表面宏/ 微观形貌可采用各种显微镜及3D表面轮廓仪等进行检测,表面损伤分布可采用择优腐蚀法和分步蚀刻法检测;粗加工和半精加工硅片的损伤深度宜采用角度抛光法检测,而精加工硅片的损伤深度较小,宜采用截面Raman光谱分析和恒定腐蚀速率法检测;损伤层的微裂纹、位错、非晶及多晶相变等微观结构可采用分步蚀刻法、平视和剖视TEM分析法及显微Raman光谱仪检测;表面层宏观残余应力分布可用显微Raman光谱仪检测,其微观应变可采用高分辨X射线衍射仪的双品摇摆曲线的半高宽值来衡量.综合以上检测技术可以对硅片加工表面层损伤进行系统的评价.

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